Patents by Inventor Mitsuhiro Tomura

Mitsuhiro Tomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of cleaning substrate processing apparatus
    Patent number: 9925571
    Abstract: A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: March 27, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Akihiro Kikuchi, Mitsuhiro Tomura
  • Plasma etching method
    Patent number: 9570312
    Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: February 14, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryohei Takeda, Mitsuhiro Tomura, Akinori Kitamura, Shinji Higashitsutsumi, Hiroto Ohtake, Takashi Tsukamoto
  • PLASMA ETCHING METHOD
    Publication number: 20150099366
    Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.
    Type: Application
    Filed: May 29, 2013
    Publication date: April 9, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryohei Takeda, Mitsuhiro Tomura, Akinori Kitamura, Shinji Higashitsutsumi, Hiroto Ohtake, Takashi Tsukamoto
  • CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20150007857
    Abstract: A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 8, 2015
    Inventors: Akihiro Kikuchi, Mitsuhiro Tomura