Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to load and unload a substrate, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: This invention relates to a semiconductor substrate processing apparatus and method for forming interconnects by filling a circuit pattern groove and/or a hole formed in a semiconductor substrate with a plated metal film, and removing the plated metal film while leaving the metal film at the filled portion. The apparatus comprises a carry-in and carry-out section for carrying in and carrying out a semiconductor substrate, which has a circuit formed on a surface thereof, in a dry state; a plated metal film forming unit for forming a plated metal film on the semiconductor substrate which has been carried in; a bevel etching unit for etching a peripheral edge portion of the semiconductor substrate; a polishing unit for polishing at least part of the plated metal film on the semiconductor substrate; and a transport mechanism for transporting the semiconductor substrate between the above units.