Patents by Inventor Mitsunobu Koshiba

Mitsunobu Koshiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-sensitive resin composition with admixtures of O-quinone diazide and acid esters having nitrobenzyl or cyanobenzyl group
    Patent number: 4963463
    Abstract: A radiation-sensitive resin composition comprising a quinonediazide-type radiation-sensitive resin and a compound generating an acid upon irradiation. Said radiation-sensitive resin composition can be used as a resist suitable for dry development by plasma etching and enables one to obtain an etching image having high precision with high reproducibility at a high degree of resolution and selectivity.
    Type: Grant
    Filed: February 15, 1989
    Date of Patent: October 16, 1990
    Assignees: Japan Synthetic Rubber Co., Ltd., UCB Societe Anonyme
    Inventors: Mitsunobu Koshiba, Keiichi Yamada, Yoshiyuki Harita, Bruno Roland, Jan Vandendriesshe
  • Method for high temperature reaction process
    Patent number: 4957588
    Abstract: A method for high temperature reaction process, including the steps of mounting a substrate on which a radiation-sensitive polymer film is formed on a lower heating plate in a reaction vessel, sealing the reaction vessel while positioning an upper heating plate to above the substrate, maintaining a temperature difference between temperatures of the lower heating plate and the upper heating plate within a predetermined range, and supplying a reactive compound into the reaction vessel.
    Type: Grant
    Filed: November 16, 1989
    Date of Patent: September 18, 1990
    Assignees: Japan Synthetic Rubber Co., Ltd., UCB Societe Anonyme
    Inventors: Mitsunobu Koshiba, Yoshiyuki Harita, Yuuji Furuto, Bruno Roland, Ria Lombaerts
  • Reactive ion etching apparatus
    Patent number: 4886565
    Abstract: A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material to be etched is supported by a chucking device disposed on a negative electrode and in this apparatus, a magnetic field parallel to the surface of the material to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode to a temperature of not more than 0.degree. C.
    Type: Grant
    Filed: February 7, 1989
    Date of Patent: December 12, 1989
    Assignee: Japan Synthetic Rubber Co., Ltd.
    Inventors: Mitsunobu Koshiba, Keiichi Yamada, Yoshiyuki Harita, Shin'ichi Kawamura, Yuuji Furuto