Abstract: A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Abstract: In a film-forming method: a to-be-processed substrate and a target are disposed inside a vacuum chamber; a sputtering gas is introduced into the vacuum chamber; and electric power is charged to the target to sputter the target, thereby forming a film on the surface of the to-be-processed-substrate. A leakage magnetic field is caused to locally act on a lower side of a sputtering surface by means of a magnet unit disposed above the target in case that surface of the target which is sputtered is defined as the sputtering surface and the sputtering-surface side is defined as the lower side. The magnet unit is rotated, during film formation by sputtering, such that a region of action of the leakage magnetic field on the sputtering surface varies continuously. A step is included in which a direction of rotation of the magnet unit in a forward direction and a reverse direction is alternately switched.

Abstract: In a method of forming a carbon film of this invention, a target made of carbon is used, and in a state in which leakage magnetic field Mf is being functioned on a front surface side of the target, electric power is applied to the target to sputter, thereby forming a carbon film on a surface of a to-be-processed object. At this time, a region for the leakage magnetic field to function on the target surface is made local, and the region for the leakage magnetic field to function is periodically changed by relatively moving the region relative to the target from an origin on the target surface back to the origin. Also, a product of an average magnetic field strength of the leakage magnetic field at a predetermined position on the target surface and applied electric power is kept below 125 G·kW.

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Abstract: A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Abstract: A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the seed layer. In the step B, a compound including strontium (Sr), ruthenium (Ru), and oxygen (O) is formed as the seed layer by a sputtering method. In the step C, where a substrate temperature is defined by Td when the dielectric layer is formed, 560° C.?Td?720° C. is determined.

Abstract: The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

Abstract: A method of manufacturing a multi-layered film includes: forming an electroconductive layer on a substrate; forming a seed layer including an oxidative product having a perovskite structure so as to coat the electroconductive layer by a sputtering method; and forming a dielectric layer so as to coat the seed layer.