Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

Abstract: A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Abstract: A substrate processing apparatus includes: a holding unit, a processing cup, a first supply unit, a second supply unit, a drain unit, and a first measurement unit. The holding unit holds a substrate. The processing cup is provided around the holding unit. The first supply unit supplies a chemical liquid to the substrate held by the holding unit. The second supply unit supplies a rinse liquid or a drying liquid to the substrate held by the holding unit. The drain unit is provided at the bottom of the processing cup, and is connected to a drain line and a recovery line via a line switch. The first measurement unit is provided in the drain unit, and measures the purity of the rinse liquid or the drying liquid.

Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

Abstract: A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Abstract: A liquid processing method can remove pure water existing within a pattern of a substrate and replace the pure water with a solvent rapidly. The liquid processing method of supplying the pure water onto the substrate, which is horizontally held and has the pattern formed on a surface thereof, and drying the substrate includes a pure water supplying process of supplying the pure water onto the surface of the substrate; a heated solvent supplying process of supplying, after the pure water supplying process, the solvent in a liquid state, which is heated to a temperature equal to or higher than a boiling point of water, onto the surface of the substrate on which the pure water exists; and a removing process of drying the substrate by removing the solvent form the surface of the substrate.

Abstract: Disclosed is a substrate processing method including a first surface cleaning step of supplying a first cleaning liquid containing water to a first surface of a substrate; a second surface cleaning step of supplying a second cleaning liquid containing water to a second surface that is opposite to the first surface; a water removal step of removing the water remaining on the second surface of the substrate in a state where the first surface is not exposed to outside air, after the second surface cleaning step; a water-repellency step of supplying a water-repellent agent to the first surface of the substrate after the water removal step; and a drying step of drying the substrate after the water-repellency step.

Abstract: A substrate processing method includes a liquid processing process, a first replacement process, a water-repellent process, a second replacement process and a drying process. In the liquid processing process, a processing liquid containing water is supplied to a substrate. In the first replacement process, the processing liquid is replaced by supplying an organic solvent having a first temperature to the substrate after being subjected to the liquid processing process. In the water-repellent process, the substrate is allowed to be water-repellent by supplying a water-repellent solution to the substrate after being subjected to the first replacement process. In the second replacement process, the water-repellent solution is replaced by supplying the organic solvent having a second temperature higher than the first temperature to the substrate after being subjected to the water-repellent process.

Abstract: Disclosed is a substrate processing method including a first surface cleaning step of supplying a first cleaning liquid containing water to a first surface of a substrate; a second surface cleaning step of supplying a second cleaning liquid containing water to a second surface that is opposite to the first surface; a water removal step of removing the water remaining on the second surface of the substrate in a state where the first surface is not exposed to outside air, after the second surface cleaning step; a water-repellency step of supplying a water-repellent agent to the first surface of the substrate after the water removal step; and a drying step of drying the substrate after the water-repellency step.

Abstract: Disclosed is a substrate liquid processing apparatus. The apparatus includes: a pure water supply unit (a rinse liquid supply unit) configured to supply pure water to a substrate; and a drying liquid supply unit configured to supply a drying liquid having a higher volatility than the pure water to the substrate. The substrate liquid processing apparatus is used to supply the drying liquid having the higher volatility, of which a part contains a silicon-based organic compound, to the substrate, from the drying liquid supply unit.

Abstract: A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.

Abstract: A liquid processing method can remove pure water existing within a pattern of a substrate and replace the pure water with a solvent rapidly. The liquid processing method of supplying the pure water onto the substrate, which is horizontally held and has the pattern formed on a surface thereof, and drying the substrate includes a pure water supplying process of supplying the pure water onto the surface of the substrate; a heated solvent supplying process of supplying, after the pure water supplying process, the solvent in a liquid state, which is heated to a temperature equal to or higher than a boiling point of water, onto the surface of the substrate on which the pure water exists; and a removing process of drying the substrate by removing the solvent form the surface of the substrate.

Abstract: Disclosed is a substrate liquid processing method including: performing a liquid processing step of liquid-processing a substrate with a processing liquid, a rinse processing step of rinsing the liquid-processed substrate with a rinse liquid, and a water-repellency processing step of imparting water-repellency to the rinsed substrate with a water-repellent liquid; then, performing a cleaning processing step of cleaning the water-repellency-imparted substrate with a functional liquid; then, performing an alcohol processing step of bringing the cleaned substrate in contact with alcohol; and then, performing a drying processing step of drying the substrate.

Abstract: This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse treatment step for rinsing the liquid-treated substrate with a rinsing liquid; a water-repellency treatment step for subjecting the rinsed substrate to a water-repellency treatment using a water-repellency-imparting solution; next, a substitution treatment step for subjecting the substrate subjected to the water-repellency treatment to a substitution treatment acceleration liquid; a cleaning treatment step for cleaning the substrate subjected to the water-repellency treatment by using a cleaning solution; and thereafter, a drying treatment step for substituting the cleaning solution with a drying solution having a higher volatility than that of the cleaning solution, and removing the drying solution from the substrate. Thus, it is possible to prevent pattern collapse during the drying treatment, and to decrease particles caused by watermarks.

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Abstract: A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.