Abstract: A control device of a substrate processing apparatus is configured to execute: calculating patterns for changing an order of loading to the substrate processing apparatus for multiple substrates loaded to the substrate processing apparatus; generating, for each obtained pattern, a time table in which process end times in the polishing device, the cleaning device, and the transport device are associated, so that an idling state does not occur from a time when the substrates are loaded to the substrate processing apparatus until a cleaning process ends; selecting a time table with a shortest time from a time when a process of a substrate initially loaded to the substrate processing apparatus starts until a process of a lastly loaded substrate ends in the obtained time tables; and controlling timings of loading the substrates to the substrate processing apparatus based on the selected time table.

Abstract: A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.

Abstract: A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Abstract: The present invention improves the accuracy of detecting abnormality in a substrate processing apparatus. A failure detection apparatus 520 is provided with a data acquisition part 522 used to collect data detected by sensors 270-1 to 270-a, 370-1 to 370-b and 470-1 to 470-c disposed in a CMP apparatus. In addition, the failure detection apparatus 520 is provided with a determination part 524 used to read recipe data from a recipe storage part 512, to compare the recipe data thus read with the data collected by a data acquisition part 522, thereby determining that abnormality is present in the CMP apparatus if the two data items differ.

Abstract: A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Abstract: A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.

Abstract: The present invention efficiently executes a plurality of functions of a substrate treatment apparatus. A control device 5 includes: a plurality of software applications (interface-related APSW 510 and control-related APSW 520) configured to execute each function of treatments concerning a CMP apparatus; and a shared memory 540 which stores information that is used in the plurality of software applications therein. The plurality of software applications include a task monitoring software application 530 which monitors whether abnormality has occurred in the plurality of software applications or not. The task monitoring software application 530 restarts the software application in which the abnormality has occurred, when the abnormality has occurred in any of the plurality of software applications, and makes the other software applications continue the respective processes.

Abstract: The present invention efficiently executes a plurality of functions of a substrate treatment apparatus. A control device 5 includes: a plurality of software applications (interface-related APSW 510 and control-related APSW 520) configured to execute each function of treatments concerning a CMP apparatus; and a shared memory 540 which stores information that is used in the plurality of software applications therein. The plurality of software applications include a task monitoring software application 530 which monitors whether abnormality has occurred in the plurality of software applications or not. The task monitoring software application 530 restarts the software application in which the abnormality has occurred, when the abnormality has occurred in any of the plurality of software applications, and makes the other software applications continue the respective processes.

Abstract: A CMP apparatus includes a polishing unit 3, a cleaning unit 4, a load/unload unit 2, a transfer unit, and a control section 5 configured to control transfer of a substrate in the transfer unit. When the polishing unit includes a plurality of polishing sections, or the cleaning unit includes a plurality of cleaning sections, the control section 5 can set a test mode that operates the polishing section or the cleaning section for a test to some of the plurality of polishing sections, or some of the plurality of cleaning sections, causes a substrate to be transferred to the polishing section or the cleaning section to which the test mode is not set, and causes a test substrate different from the substrate to be transferred to the polishing section or the cleaning section to which the test mode is set.

Abstract: A CMP apparatus includes a polishing unit 3, a cleaning unit 4, a load/unload unit 2, a transfer unit, and a control section 5 configured to control transfer of a substrate in the transfer unit. When the polishing unit includes a plurality of polishing sections, or the cleaning unit includes a plurality of cleaning sections, the control section 5 can set a test mode that operates the polishing section or the cleaning section for a test to some of the plurality of polishing sections, or some of the plurality of cleaning sections, causes a substrate to be transferred to the polishing section or the cleaning section to which the test mode is not set, and causes a test substrate different from the substrate to the polishing section or the cleaning section to which the test mode is set.

Abstract: The CMP apparatus is provided with a polishing unit 3; a cleaning unit 4; a load/unload unit for transferring substrates to the polishing unit 3 and receiving substrates from the cleaning unit 4; a wafer transporting unit; and a control section 5 for controlling the timing of loading wafers into the CMP apparatus. The control section 5 creates a time table correlating treatment ending times or scheduled treatment ending times in polishing sections, cleaning sections and transporting sections for each plurality of wafers to be loaded into the CMP apparatus and controls the timing of loading the plurality of wafers into the CMP apparatus on the basis of the time table, so that a standby state does not occur in a period from when the wafers are loaded into the CMP apparatus to when cleaning treatment is completed.

Abstract: The adjustment section 524 adjusts the correction value by which raw data detected by a measuring instrument provided in a CMP device is corrected to obtain a measured value. The interface section 522 transmits, to the CMP device, a set value used when the correction value is adjusted and an operating instruction based on the set value, and receives a measured value obtained by correcting raw data detected by the measuring instrument based on the correction value while the CMP device operates according to the operating instruction. The adjustment section 524 adjusts the correction value based on the measured value received by the interface section 522 and the set value used when the correction value is adjusted.

Abstract: The present invention improves the accuracy of detecting abnormality in a substrate processing apparatus. A failure detection apparatus 520 is provided with a data acquisition part 522 used to collect data detected by sensors 270-1 to 270-a, 370-1 to 370-b and 470-1 to 470-c disposed in a CMP apparatus. In addition, the failure detection apparatus 520 is provided with a determination part 524 used to read recipe data from a recipe storage part 512, to compare the recipe data thus read with the data collected by a data acquisition part 522, thereby determining that abnormality is present in the CMP apparatus if the two data items differ.

Abstract: The present invention efficiently executes a plurality of functions of a substrate treatment apparatus. A control device 5 includes: a plurality of software applications (interface-related APSW 510 and control-related APSW 520) configured to execute each function of treatments concerning a CMP apparatus; and a shared memory 540 which stores information that is used in the plurality of software applications therein. The plurality of software applications include a task monitoring software application 530 which monitors whether abnormality has occurred in the plurality of software applications or not. The task monitoring software application 530 restarts the software application in which the abnormality has occurred, when the abnormality has occurred in any of the plurality of software applications, and makes the other software applications continue the respective processes.

Abstract: A polishing method includes: a pre-polishing film thickness measurement step of taking a substrate before polishing out of a cassette and measuring a thickness of a polishing film of the substrate with a film thickness measurement device; the pre-polishing substrate withdrawal step of returning the substrate after the pre-polishing film thickness measurement to the cassette; the polishing step of taking the substrate, which has been returned to the cassette, out of the cassette and polishing the substrate; the cleaning/drying step of cleaning and drying the substrate after polishing; the post-polishing substrate withdrawal step of returning the substrate after cleaning/drying to the cassette; and the post-polishing film thickness measurement step of taking the substrate after cleaning/drying, which has been returned to the cassette, out of the cassette and measuring the thickness of the polishing film of the substrate with the film thickness measurement device.

Abstract: A polishing method can reduce the waiting time of a substrate after polishing, standing by for measurement of a thickness of a polishing film, thereby increasing the throughput of an entire apparatus, and which can securely perform feedback control.

Abstract: High-contrast photographic images are obtained by developing with a developer containing at least one dihydroxybenzene and sulfite ion and then treating with a solution of an oxidizing agent.

Abstract: A silver halide photographic material having improved sensitivity unaccompanied by an increase in fog formation containing, in a photographic layer thereof, an organic compound having a nitrogen-halogen bond in the molecule.