Patents by Inventor Mitsuo Kosugi

Mitsuo Kosugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Circuit for protecting switching power source from overloads and shot circuits
    Patent number: 5568343
    Abstract: A protective circuit is used in conjunction with a switching power source for protecting the latter from overload and from short circuits. It is detected whether the current at the primary winding current of a switching power source transformer, the load current of the switching power source, or both exceed predetermined reference voltages. If so, supply of power to the switching power source is interrupted for a predetermined period of time, thereby bringing the switching power source into inoperable condition in this duration.
    Type: Grant
    Filed: October 19, 1994
    Date of Patent: October 22, 1996
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Mitsuo Kosugi
  • Push-pull, resonant type switching power supply circuit
    Patent number: 5548502
    Abstract: To provide a resonant switching power supply switch with a simple structure and little noise, a push-pull resonant switching power supply circuit includes a transformer 104, a capacitor 105, two transistors 106a and 106b (bipolar transistors or field-effect transistors), and a bias circuit 201. The transformer 104 has a rectification circuit 340 connected to its secondary winding. The capacitor 105 forms a parallel resonant circuit in combination with the transformer 104. The transistors 106a and 106b are push-pull connected to the primary winding of the transformer 104 and the bases of which are connected to a feedback winding 104 of transformer. The bias circuit 201 applies a variable bias voltage to the base of the transistors.
    Type: Grant
    Filed: August 29, 1994
    Date of Patent: August 20, 1996
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Mitsuo Kosugi
  • Photoconductive imaging apparatus
    Patent number: 5233265
    Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.
    Type: Grant
    Filed: August 1, 1990
    Date of Patent: August 3, 1993
    Assignees: Hitachi, Ltd., Nippon Hoso Kyokai
    Inventors: Yukio Takasaki, Kazutaka Tsuji, Tatsuo Makishima, Tadaaki Hirai, Sachio Ishioka, Tatsuro Kawamura, Keiichi Shidara, Eikyu Hiruma, Kenkichi Tanioka, Junichi Yamazaki, Kenji Sameshima, Hirokazu Matsubara, Kazuhisa Taketoshi, Mitsuo Kosugi, Shiro Suzuki, Takashi Yamashita, Masaaki Aiba, Yoshizumi Ikeda, Tsuyoshi Uda, Naohiro Goto, Yasuhiko Nonaka, Eisuke Inoue, Hirofumi Ogawa
  • Photoconductive device and method of operating the same
    Patent number: 4952839
    Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
    Type: Grant
    Filed: October 12, 1989
    Date of Patent: August 28, 1990
    Assignees: Hitachi, Ltd, Nippon Hoso Kyokai
    Inventors: Kenkichi Tanioka, Mitsuo Kosugi, Junichi Yamazaki, Keiichi Shidara, Kazuhisa Taketoshi, Tatsuro Kawamura, Eikyuu Hiruma, Shiro Suzuki, Takashi Yamashita, Masaaki Aiba, Yochizumi Ikeda, Tadaaki Hirai, Yukio Takasaki, Sachio Ishioka, Tatsuo Makishima, Kenji Sameshima, Tsuyoshi Uda, Naohiro Goto, Yasuhiko Nonaka, Eisuke Inoue, Kazutaka Tsuji, Hirofumi Ogawa
  • Target of image pickup tube having an amorphous semiconductor laminate
    Patent number: 4900975
    Abstract: A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.
    Type: Grant
    Filed: June 29, 1987
    Date of Patent: February 13, 1990
    Assignees: Hitachi, Ltd., Nippon Hoso Kyokai
    Inventors: Yasuharu Shimomoto, Sachio Ishioka, Yukio Takasaki, Tadaaki Hirai, Kazutaka Tsuji, Tatsuo Makishima, Hirokazu Matsubara, Kenji Sameshima, Junichi Yamazaki, Kenkichi Tanioka, Mitsuo Kosugi, Keiichi Shidara, Tatsuro Kawamura, Eikyuu Hiruma, Takashi Yamashita
  • Photoconductive device and method of operating the same
    Patent number: 4888521
    Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
    Type: Grant
    Filed: July 2, 1987
    Date of Patent: December 19, 1989
    Assignees: Hitachi Ltd., Nippon Hoso Kyokai
    Inventors: Kenkichi Tanioka, Keiichi Shidara, Tatsuro Kawamura, Junichi Yamazaki, Eikyuu Hiruma, Kazuhisa Taketoshi, Shiro Suzuki, Takashi Yamashita, Mitsuo Kosugi, Yochizumi Ikeda, Masaaki Aiba, Tadaaki Hirai, Yukio Takasaki, Sachio Ishioka, Tatsuo Makishima, Kenji Sameshima, Tsuyoshi Uda, Naohiro Goto, Yasuhiko Nonaka, Eisuke Inoue, Kazutaka Tsuji, Hirofumi Ogawa