Abstract: A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Abstract: A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Abstract: A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the seed layer. In the step B, a compound including strontium (Sr), ruthenium (Ru), and oxygen (O) is formed as the seed layer by a sputtering method. In the step C, where a substrate temperature is defined by Td when the dielectric layer is formed, 560° C.?Td?720° C. is determined.

Abstract: The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

Abstract: A method of manufacturing a multi-layered film includes: forming an electroconductive layer on a substrate; forming a seed layer including an oxidative product having a perovskite structure so as to coat the electroconductive layer by a sputtering method; and forming a dielectric layer so as to coat the seed layer.