Abstract: The printed circuit board includes, a first conductive layer including copper foil, an insulating base layer, and a second conductive layer including copper foil in this order, and includes a via-hole laminate that is stacked on an inner circumference and a bottom of a connection hole extending through the first conductive layer and the base layer in a thickness direction. The via-hole laminate has an electroless copper plating layer stacked on the connection hole and an electrolytic copper plating layer stacked on the electroless copper plating layer. The copper foil has copper crystal grains oriented in a (100) plane orientation, and an average crystal grain size of copper of 10 ?m or more. The electroless copper plating layer includes palladium and tin, and an amount of the palladium stacked per unit area of a surface of the copper foil is 0.18 ?g/cm2 or more and 0.40 ?g/cm2 or less.

Abstract: The printed circuit board includes, a first conductive layer including copper foil, an insulating base layer, and a second conductive layer including copper foil in this order, and includes a via-hole laminate that is stacked on an inner circumference and a bottom of a connection hole extending through the first conductive layer and the base layer in a thickness direction. The via-hole laminate has an electroless copper plating layer stacked on the connection hole and an electrolytic copper plating layer stacked on the electroless copper plating layer. The copper foil has copper crystal grains oriented in a (100) plane orientation, and an average crystal grain size of copper of 10 ?m or more. The electroless copper plating layer includes palladium and tin, and an amount of the palladium stacked per unit area of a surface of the copper foil is 0.18 ?g/cm2 or more and 0.40 ?g/cm2 or less.

Abstract: A method for separating metal components from a treatment material containing a silicate and metal elements includes: a reaction step of reacting the treatment material and a molten alkali hydroxide in which bubbles due to water vapor derived from water are generated by heating a hydroxide of an alkali metal or an alkaline-earth metal and the water in a state where the hydroxide and the water coexist, to obtain a reaction product; and a first precipitation step of dissolving the reaction product of the treatment material and the molten alkali hydroxide after the reaction step in water, thereby generating a precipitate containing the metal elements.

Abstract: A method for separating metal components from a treatment material containing a silicate and metal elements includes: a reaction step of reacting the treatment material and a molten alkali hydroxide in which bubbles due to water vapor derived from water are generated by heating a hydroxide of an alkali metal or an alkaline-earth metal and the water in a state where the hydroxide and the water coexist, to obtain a reaction product; and a first precipitation step of dissolving the reaction product of the treatment material and the molten alkali hydroxide after the reaction step in water, thereby generating a precipitate containing the metal elements.

Abstract: A magnesium alloy sheet is made of a magnesium alloy containing Al. Particles of an intermetallic compound containing at least one of Al and Mg are present in the sheet in a dispersed state. The sheet includes an oxide film which extends substantially over the surface of the sheet and which has a uniform thickness. The average size of the particles of the intermetallic compound is 0.5 ?m or less. The percentage of the total area of the particles is 11% or less. Therefore, the magnesium alloy sheet is excellent corrosion resistance. A magnesium alloy structural member is provided.

Abstract: Provided are a magnesium alloy sheet having excellent formability in plastic forming, such as press forming, and a magnesium alloy structural member. The magnesium alloy sheet is obtained by subjecting a magnesium alloy to rolling and has a cross section parallel to the thickness direction of the magnesium alloy sheet, in which, when the length of the major axis and the length of the minor axis of each of crystal grains in the cross section are determined, an aspect ratio is defined as the ratio of the length of the major axis to the length of the minor axis (length of major axis/length of minor axis), and crystal grains having an aspect ratio of 3.85 or more are defined as elongated grains, the area fraction of the elongated grains in the cross section is 3% to 20%.

Abstract: An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×1017 cm?3 or less.

Abstract: A magnesium alloy sheet is made of a magnesium alloy containing Al. Particles of an intermetallic compound containing at least one of Al and Mg are present in the sheet in a dispersed state. The sheet includes an oxide film which extends substantially over the surface of the sheet and which has a uniform thickness. The average size of the particles of the intermetallic compound is 0.5 ?m or less. The percentage of the total area of the particles is 11% or less. Therefore, the magnesium alloy sheet is excellent corrosion resistance. A magnesium alloy structural member is provided.

Abstract: An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×1017 cm?3 or less.

Abstract: A compound semiconductor substrate includes a substrate composed of a p-type compound semiconductor; and a substance containing p-type impurity atoms, the substance being bonded to a surface of the substrate.

Abstract: Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve 30 representing the relation between a voltage applied to the obverse face of a wafer 20 serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve 32 is found through applying a voltage to the reverse face of the wafer 20. The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount 34 for the wafer 20, found from the first C-V curve 30 and the second C-V curve 32.

Abstract: Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve 30 representing the relation between a voltage applied to the obverse face of a wafer 20 serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve 32 is found through applying a voltage to the reverse face of the wafer 20. The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount 34 for the wafer 20, found from the first C-V curve 30 and the second C-V curve 32.