Abstract: Provided is an IQ optical modulator including a nest-type MZ optical waveguide having optical modulation regions of I channel and Q channel End portions of an input optical waveguide and an output optical waveguide of the IQ optical modulator are located on a same edge face of a chip of the IQ optical modulator, an optical cross waveguide is included in which an optical waveguide between a first optical combiner and a second optical combiner of the nest-type MZ optical waveguide and the input optical waveguide cross each other, a first optical divider is provided between the I-channel optical modulation region and the Q-channel optical modulation region, and a light propagation direction in the first optical divider and a light propagation direction in the optical modulation regions are opposite to each other.

Abstract: A vertical layer stack including a bit-line-level dielectric layer and an etch stop dielectric layer can be formed over an array region. Bit-line trenches are formed through the vertical layer stack. Bit-line-trench fill structures are formed in the bit-line trenches. Each of the bit-line-trench fill structures includes a stack of a bit line and a capping dielectric strip. At least one via-level dielectric layer can be formed over the vertical layer stack. A bit-line-contact via cavity can be formed through the at least one via-level dielectric layer and one of the capping dielectric strips. A bit-line-contact via structure formed in the bit-line-contact via cavity includes a stepped bottom surface including a top surface of one of the bit lines, a sidewall segment of the etch stop dielectric layer, and a segment of a top surface of the etch stop dielectric layer.

Abstract: An photonic integrated circuit for which a mounting process in free space optics is not performed, formation and airtight sealing of an optical device are precisely performed, and cost reduction can be effectively achieved has a configuration including a lid portion connected to an upper surface of a semiconductor substrate to cover an optical waveguide and a mirror provided on the upper surface of the semiconductor substrate and a lens in the lid portion for concentrating light reflected by the mirror and emitting the light outward. A bonding material on an upper surface of a dielectric film formed above the upper surface of the semiconductor substrate and a bonding material formed in a peripheral edge portion of the lid portion are disposed so as to overlap witheach other to be bonded.

Abstract: A semiconductor IQ optical modulator in which a phase modulation unit is configured by a differential capacitively loaded traveling-wave electrode structure based on an SS line configuration, phase modulation units of adjacent channels are spaced apart from each other by 400 ?m or more, a distance between main signal lines of the capacitance loading type structure is 60 ?m or less, a DC phase adjustment electrode and a PAD are provided between an I side phase modulation unit and a Q side phase modulation unit, the DC phase adjustment electrode is spaced apart by at least 80 ?m or more from a signal line of the phase adjustment unit, and a crosstalk characteristic between the adjacent channels is ?30 dB or less in a required frequency band.

Abstract: An oscillation wavelength adjustment type TLD for adjusting a control amount of a resonator length L, independently from physical property values of a waveguide material when a waveguide is used in the phase adjustment, without an external resonator structure in accordance with a MEMS technology employs a reflective phase adjuster (20) including a multi-mode interference waveguide (21), which is optically coupled to an optical gain waveguide and has a configuration including one input port and five output ports, and a reflective delay line array (25) connected to an output waveguide on a side of the five output ports of the multi-mode interference waveguide (21). Five reflective delay lines (24-0 to 24-4) provided in the reflective delay line array (25) are capable of adjusting the intensity of reciprocating light in accordance with a wavelength change of transmitted light. The intensity of the reciprocating light can also be adjusted by an electric signal applied from the outside.

Abstract: Provided is a high-speed optical transmission-reception apparatus including a digital-signal processing circuit and optical modulation and optical reception modules, in which a flexible printed circuit is used as a high-frequency interface for the optical modulation and optical reception modules, a mechanism for connecting the high-frequency line pattern to the flexible printed circuit is provided on a package substrate of the digital-signal processing circuit, and the package substrate and the optical modulation and optical reception modules are connected by the flexible printed circuit.

Abstract: After a step of etching a core layer, a lower cladding layer, and a substrate so that a recessed opening including one end of an optical waveguide is formed relative to a multilayer board and a step of forming mask layers on a top surface of the substrate including the opening, in a step, crystal is grown with respect to the mask layers in the opening, and a tilt surface to be used as the monolithic mirror is formed. An upper cladding layer is formed covering the core layer at the same time. Then, formation of an optical waveguide pattern, formation of the optical waveguide and an end surface of the optical waveguide, formation of a dielectric film for preventing reflection, and formation of a metal film on a surface of the tilt surface are executed.

Abstract: A tunable laser that is characterized by including a gain waveguide ACT made of an optically active semiconductor material, and a tunable wavelength filter TWF that selects light of a specific wavelength using current injection, which are integrated on a compound semiconductor substrate S, in which at least one or more of the tunable wavelength filters TWF are formed to select a specific wavelength of light from the light from the waveguide ACT and return the selected specific wavelength of light back to the waveguide ACT, and a semiconductor mixed crystal material constituting the tunable wavelength filter TWF has a strained multiple quantum well structure MQW in which a mixed crystal material ratio changes periodically.

Abstract: Provided is an IQ optical modulator including a nest-type MZ optical waveguide having optical modulation regions of I channel and Q channel End portions of an input optical waveguide and an output optical waveguide of the IQ optical modulator are located on a same edge face of a chip of the IQ optical modulator, an optical cross waveguide is included in which an optical waveguide between a first optical combiner and a second optical combiner of the nest-type MZ optical waveguide and the input optical waveguide cross each other, a first optical divider is provided between the I-channel optical modulation region and the Q-channel optical modulation region, and a light propagation direction in the first optical divider and a light propagation direction in the optical modulation regions are opposite to each other.

Abstract: In a semiconductor light modulator having a multiple quantum well structure, a light spot size converter element provided in a light input/output section is easily and accurately manufactured. At least one layer of a compound semiconductor layer containing a P element is inserted into a desired position in the multiple quantum well structure containing an Al element. This layer is smaller than a band gap of a compound semiconductor used in a bather layer of the multiple quantum well.

Abstract: An optical integrated circuit of the present disclosure is a monolithic optical integrated circuit formed on a substrate and includes a semiconductor laser, a 1×N optical demultiplexer, array waveguides including N waveguides, each of the N waveguides having a semiconductor optical amplifier (SOA) configured to amplify a corresponding split light beam from the semiconductor laser, and an N×1 optical multiplexer. A phase of light beams output from the SOA at input ports of the N×1 optical multiplexer is set so that the output light beams are multiplexed at an output port of the N×1 optical multiplexer in the same phase. A phase can be set by setting a length of the N waveguides and providing a phase adjuster.

Abstract: To provide a surface emitting type optical device capable of appropriate on-wafer measurement without affecting element characteristics, low-cost manufacturing, and high-density packaging. This surface emitting type light source includes, in an optical waveguide having a semiconductor laser region formed on a top surface being one main surface of a semiconductor substrate and a spot size converter region leading thereto, a reflective mirror that reflects light emitted from the laser into free space via the converter to the top surface side of the substrate. A p-type drive electrode in the laser region and an insulating layer in the converter region are provided on the top surface of the substrate, and an n-type drive electrode in the laser region is provided on a bottom surface of the other main surface of the substrate. In the laser, current injection into an active layer using various electrodes generates an optical gain in the active layer.

Abstract: A wavelength dispersion amount estimation method, a wavelength dispersion compensation circuit, and a receiving device which rapidly estimate and set a wavelength dispersion amount to compensate with high accuracy at the receiving device which compensates waveform distortion at an optical fiber transmission path.

Abstract: A wavelength dispersion amount estimation method, a wavelength dispersion compensation circuit, and a receiving device which rapidly estimate and set a wavelength dispersion amount to compensate with high accuracy at the receiving device which compensates waveform distortion at an optical fiber transmission path.

Abstract: A wavelength dispersion amount estimation method, a wavelength dispersion compensation circuit, and a receiving device which rapidly estimate and set a wavelength dispersion amount to compensate with high accuracy at the receiving device which compensates waveform distortion at an optical fiber transmission path.

Abstract: A wavelength dispersion amount estimation method, a wavelength dispersion compensation circuit, and a receiving device which rapidly estimate and set a wavelength dispersion amount to compensate with high accuracy at the receiving device which compensates waveform distortion at an optical fiber transmission path.

Abstract: A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

Abstract: A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.