Abstract: A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.

Abstract: An impedance matching apparatus adapted to be connected between a reaction chamber and a power source for plasma processing includes a transformer, a coil unit, and a capacitor connected in series. A primary side of the transformer is adapted to be connected to the power source, and a secondary side of the transformer has multiple taps positioned at different windings; and the coil unit is comprised of multiple coils having different inductances and arranged in parallel, wherein each tap is connected to a different coil or coils. The impedance matching circuit further includes a switch unit provided between the coil unit and the capacitor.

Abstract: A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.

Abstract: A circuit for measuring DC bias voltage occurring in an ungrounded electrode of a plasma processing apparatus, includes: a first terminal connected between the ungrounded electrode and the RF power source; a second terminal for determining a value of the DC bias voltage; a first resistance connected between the first terminal and the second terminal; a second resistance connected between the second terminal and a ground; and a condenser disposed in parallel to the second resistance between the second terminal and the ground. The sum of the first resistance value and the second resistance value is about 50 M? or greater.

Abstract: A method for monitoring plasma-induced damage to a substrate while being processed in a plasma CVD apparatus includes: measuring DC floating potential of the substrate using a detection electrode in contact with the substrate while the substrate is processed in the apparatus; and detecting abnormality as plasma-induced damage based on the measured DC floating potential.

Abstract: A plasma CVD apparatus for forming a thin film on a substrate includes: a vacuum chamber; an upper electrode; a susceptor as a lower electrode; and a ring-shaped insulation plate disposed in a gap between the susceptor and an inner wall of the chamber in the vicinity of or in contact with the susceptor to minimize a floating potential charged on the substrate while processing the substrate.

Abstract: A circuit for measuring DC bias voltage occurring in an ungrounded electrode of a plasma processing apparatus, includes: a first terminal connected between the ungrounded electrode and the RF power source; a second terminal for determining a value of the DC bias voltage; a first resistance connected between the first terminal and the second terminal; a second resistance connected between the second terminal and a ground; and a condenser disposed in parallel to the second resistance between the second terminal and the ground. The sum of the first resistance value and the second resistance value is about 50 M? or greater.

Abstract: A semiconductor substrate supporting apparatus for supporting a single semiconductor substrate in a plasma CVD apparatus comprises a placing block having a substrate placing area on which the substrate is placed. The substrate placing area is anodized and has as an outermost film an anodic oxide film having a thickness of about 30 ?m to about 60 ?m and/or a dielectric breakdown voltage of about 300 V or higher.

Abstract: A substrate supporting apparatus having a plurality of support plates positioned in parallel for supporting a plurality of substrates to be treated. The plates (13), (23) and (33) have respectively central openings (14), (24) and (34) which differ in size, and have respectively a plurality of clips (15), (25) and (35) along the periphery of the opening to support a substrate above the opening. The sizes of said openings (14, 24, 34) are determined depending upon reactive gas condition (e.g., temperature, pressure, flow characteristics of reactive gas) so that a uniform thin film can be formed on each substrate and an impurity introduced into the thin film can have a suitable concentration.