Patents by Inventor Mitul Modi
Mitul Modi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136326Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.Type: ApplicationFiled: December 28, 2023Publication date: April 25, 2024Inventors: Wei LI, Edvin CETEGEN, Nicholas S. HAEHN, Ram S. VISWANATH, Nicholas NEAL, Mitul MODI
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Patent number: 11942393Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a substrate that includes a first region to be coupled with a die, and a second region separate and distinct from the first region that has a lower thermal conductivity than the first region, where the second region is to thermally insulate the first region when the die is coupled to the first region. The thermal insulation of the second region may be used during a TCB process to increase the quality of each of the interconnects of the die by promoting a higher temperature at the connection points to facilitate full melting of solder.Type: GrantFiled: February 4, 2020Date of Patent: March 26, 2024Assignee: Intel CorporationInventors: Wei Li, Edvin Cetegen, Nicholas S. Haehn, Mitul Modi, Nicholas Neal
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Patent number: 11901333Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.Type: GrantFiled: October 8, 2019Date of Patent: February 13, 2024Assignee: Intel CorporationInventors: Wei Li, Edvin Cetegen, Nicholas S. Haehn, Ram S. Viswanath, Nicholas Neal, Mitul Modi
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Publication number: 20240030116Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.Type: ApplicationFiled: September 29, 2023Publication date: January 25, 2024Inventors: Debendra MALLIK, Robert L. SANKMAN, Robert NICKERSON, Mitul MODI, Sanka GANESAN, Rajasekaran SWAMINATHAN, Omkar KARHADE, Shawna M. LIFF, Amruthavalli ALUR, Sri Chaitra J. CHAVALI
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Patent number: 11735495Abstract: Package assemblies with a molded substrate comprising fluid conduits. The fluid conduits may be operable for conveying a fluid (e.g., liquid and/or vapor) through some portion of the package substrate structure. Fluid conduits may be at least partially defined by an interconnect trace comprising a metal. The fluid conveyance may improve thermal management of the package assembly, for example removing heat dissipated by one or more integrated circuits (ICs) of the package assembly.Type: GrantFiled: February 27, 2019Date of Patent: August 22, 2023Assignee: Intel CorporationInventors: Omkar Karhade, Mitul Modi, Edvin Cetegen, Aastha Uppal
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Publication number: 20230238355Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.Type: ApplicationFiled: March 28, 2023Publication date: July 27, 2023Inventors: Wei LI, Edvin CETEGEN, Nicholas S. HAEHN, Ram S. VISWANATH, Nicholas NEAL, Mitul MODI
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Patent number: 11705377Abstract: An apparatus is provided which comprises: a plurality of dielectric layers forming a substrate, a plurality of first conductive contacts on a first surface of the substrate, a cavity in the first surface of the substrate defining a second surface parallel to the first surface, a plurality of second conductive contacts on the second surface of the substrate, one or more integrated circuit die(s) coupled with the second conductive contacts, and mold material at least partially covering the one or more integrated circuit die(s) and the first conductive contacts. Other embodiments are also disclosed and claimed.Type: GrantFiled: April 13, 2022Date of Patent: July 18, 2023Assignee: Intel CorporationInventors: Mitul Modi, Robert L. Sankman, Debendra Mallik, Ravindranath V. Mahajan, Amruthavalli P. Alur, Yikang Deng, Eric J. Li
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Publication number: 20230138543Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.Type: ApplicationFiled: December 30, 2022Publication date: May 4, 2023Inventors: Debendra MALLIK, Robert L. SANKMAN, Robert NICKERSON, Mitul MODI, Sanka GANESAN, Rajasekaran SWAMINATHAN, Omkar KARHADE, Shawna M. LIFF, Amruthavalli ALUR, Sri Chaitra J. CHAVALI
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Publication number: 20230089494Abstract: Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer having a first surface and an opposing second surface, wherein the first layer includes an insulating material, wherein the PIC has an active side, an opposing backside, and a lateral side substantially perpendicular to the active side and backside, and wherein the PIC is embedded in the insulating material with the active side facing up; an integrated circuit (IC) in a second layer at the second surface of the first layer, wherein the IC is electrically coupled to the active side of the PIC; and an optical component, having a reflector, optically coupled to the lateral side of the PIC and extending at least partially through the insulating material in the first layer along the lateral side of the PIC.Type: ApplicationFiled: September 22, 2021Publication date: March 23, 2023Applicant: Intel CorporationInventors: Xiaoqian Li, Omkar G. Karhade, Nitin A. Deshpande, Srinivas V. Pietambaram, Mitul Modi
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Publication number: 20230092821Abstract: Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC is embedded in the insulating material with an active surface facing up; a conductive pillar in the first layer; an integrated circuit (IC) in a second layer on the first layer, wherein the second layer includes the insulating material and the IC is embedded in the insulating material, and wherein the IC is electrically coupled to the active surface of the PIC and the conductive pillar; an optical component optically coupled to the active surface of the PIC; and a hollow channel surrounding the optical component, the hollow channel extending from the active surface of the PIC through the insulating material in the second layer.Type: ApplicationFiled: September 22, 2021Publication date: March 23, 2023Applicant: Intel CorporationInventors: Omkar G. Karhade, Xiaoqian Li, Nitin A. Deshpande, Ravindranath Vithal Mahajan, Srinivas V. Pietambaram, Bharat Prasad Penmecha, Mitul Modi
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Patent number: 11611164Abstract: A wide bandwidth signal connector plug, comprising a plurality of signal pins having a first anchor portion and a first mating portion, and a plurality of ground pins having a second anchor portion and a second mating portion. The plurality of ground pins is adjacent to the plurality of signal pins. The plurality of signal pins has a first thickness and the plurality of ground pins has a second thickness that is greater than the first thickness. The first anchor portion has a first width and the second anchor portion has a second width that is greater than the first width.Type: GrantFiled: June 27, 2019Date of Patent: March 21, 2023Assignee: Intel CorporationInventors: Zhenguo Jiang, Omkar Karhade, Sri Chaitra Chavali, William Lambert, Zhichao Zhang, Mitul Modi
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Publication number: 20230080454Abstract: An optoelectronic assembly is disclosed, comprising a substrate having a core comprised of glass, and a photonic integrated circuit (PIC) and an electronic IC (EIC) coupled to a first side of the substrate. The core comprises a waveguide with a first endpoint proximate to the first side and a second endpoint exposed on a second side of the substrate orthogonal to the first side. The first endpoint of the waveguide is on a third side of the core parallel to the first side of the substrate. The substrate further comprises an optical via aligned with the first endpoint, and the optical via extends between the first side and the third side. In various embodiments, the waveguide is of any shape that can be inscribed by a laser between the first endpoint and the second endpoint.Type: ApplicationFiled: September 13, 2021Publication date: March 16, 2023Applicant: Intel CorporationInventors: Srinivas V. Pietambaram, Brandon C. Marin, Debendra Mallik, Tarek A. Ibrahim, Jeremy Ecton, Omkar G. Karhade, Bharat Prasad Penmecha, Xiaoqian Li, Nitin A. Deshpande, Mitul Modi, Bai Nie
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Patent number: 11574851Abstract: An apparatus is provided which comprises: a package substrate, an integrated circuit device coupled to a surface of the package substrate, a first material on the surface of the package substrate, the first material contacting one or more lateral sides of the integrated circuit device, the first material extending at least to a surface of the integrated circuit device opposite the package substrate, two or more separate fins over a surface of the integrated circuit device, the two or more fins comprising a second material having a different composition than the first material, and a third material having a different composition than the second material, the third material over the surface of the integrated circuit device and between the two or more fins. Other embodiments are also disclosed and claimed.Type: GrantFiled: February 27, 2019Date of Patent: February 7, 2023Assignee: Intel CorporationInventors: Aastha Uppal, Omkar Karhade, Ram Viswanath, Je-Young Chang, Weihua Tang, Nitin Deshpande, Mitul Modi, Edvin Cetegen, Sanka Ganesan, Yiqun Bai, Jan Krajniak, Kumar Singh
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Patent number: 11545407Abstract: An integrated circuit package may be formed having at least one heat dissipation structure within the integrated circuit package itself. In one embodiment, the integrated circuit package may include a substrate; at least one integrated circuit device, wherein the at least one integrated circuit device is electrically attached to the substrate; a mold material on the substrate and adjacent to the at least one integrated circuit device; and at least one heat dissipation structure contacting the at least one integrated circuit, wherein the at least one heat dissipation structure is embedded either within the mold material or between the mold material and the substrate.Type: GrantFiled: January 10, 2019Date of Patent: January 3, 2023Assignee: Intel CorporationInventors: Kumar Abhishek Singh, Omkar Karhade, Nitin Deshpande, Mitul Modi, Edvin Cetegen, Aastha Uppal, Debendra Mallik, Sanka Ganesan, Yiqun Bai, Jan Krajniak, Manish Dubey, Ravindranath Mahajan, Ram Viswanath, James C. Matayabas, Jr.
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Publication number: 20220344247Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Inventors: Debendra MALLIK, Robert L. SANKMAN, Robert NICKERSON, Mitul MODI, Sanka GANESAN, Rajasekaran SWAMINATHAN, Omkar KARHADE, Shawna M. LIFF, Amruthavalli ALUR, Sri Chaitra J. CHAVALI
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Patent number: 11430724Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.Type: GrantFiled: December 30, 2017Date of Patent: August 30, 2022Assignee: Intel CorporationInventors: Debendra Mallik, Robert L. Sankman, Robert Nickerson, Mitul Modi, Sanka Ganesan, Rajasekaran Swaminathan, Omkar Karhade, Shawna M. Liff, Amruthavalli Alur, Sri Chaitra J. Chavali
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Publication number: 20220238402Abstract: An apparatus is provided which comprises: a plurality of dielectric layers forming a substrate, a plurality of first conductive contacts on a first surface of the substrate, a cavity in the first surface of the substrate defining a second surface parallel to the first surface, a plurality of second conductive contacts on the second surface of the substrate, one or more integrated circuit die(s) coupled with the second conductive contacts, and mold material at least partially covering the one or more integrated circuit die(s) and the first conductive contacts. Other embodiments are also disclosed and claimed.Type: ApplicationFiled: April 13, 2022Publication date: July 28, 2022Applicant: Intel CorporationInventors: Mitul MODI, Robert L. SANKMAN, Debendra MALLIK, Ravindranath V. MAHAJAN, Amruthavalli P. ALUR, Yikang DENG, Eric J. LI
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Patent number: 11328968Abstract: An apparatus is provided which comprises: a plurality of dielectric layers forming a substrate, a plurality of first conductive contacts on a first surface of the substrate, a cavity in the first surface of the substrate defining a second surface parallel to the first surface, a plurality of second conductive contacts on the second surface of the substrate, one or more integrated circuit die(s) coupled with the second conductive contacts, and mold material at least partially covering the one or more integrated circuit die(s) and the first conductive contacts. Other embodiments are also disclosed and claimed.Type: GrantFiled: December 27, 2016Date of Patent: May 10, 2022Assignee: Intel CorporationInventors: Mitul Modi, Robert L. Sankman, Debendra Mallik, Ravindranath V. Mahajan, Amruthavalli P. Alur, Yikang Deng, Eric J. Li
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Publication number: 20220102234Abstract: An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 18×10?6 m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.Type: ApplicationFiled: September 25, 2020Publication date: March 31, 2022Applicant: Intel CorporationInventors: Susmriti Das Mahapatra, Malavarayan Sankarasubramanian, Shenavia Howell, John Harper, Mitul Modi
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Publication number: 20220102231Abstract: Techniques and mechanisms for facilitating heat conductivity in a packaged device with a dummy die. In an embodiment, a packaged device comprises a substrate and one or more IC die coupled thereto. A dummy die structure extends to a bottom of a recess structure formed by a first package mold structure on the substrate. The dummy die structure comprises a polymer resin and a filler, or comprises a metal which has a low coefficient of thermal expansion (CTE). A second package mold structure, which extends to the recess structure, is adjacent to the first package mold structure and to an IC die. In another embodiment, a first CTE of the dummy die is less than a second CTE of one of the package mold structures, and a first thermal conductivity of the dummy die is greater than a second thermal conductivity of the one of the package mold structures.Type: ApplicationFiled: September 25, 2020Publication date: March 31, 2022Applicant: Intel CorporationInventors: Mitul Modi, Joseph Van Nausdle, Omkar Karhade, Edvin Cetegen, Nicholas Haehn, Vaibhav Agrawal, Digvijay Raorane