Abstract: Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

Abstract: A negative resist composition is provided which is less likely to swell in an alkali developing solution. An alkali-developable negative resist composition is disclosed comprising a compound (A) which generates an acid upon exposure to radiation, and a resin component (B) which becomes insoluble in alkali under the action of an acid, wherein the component (B) is a resin component containing: (b1) a unit which becomes insoluble in an alkali solution as a result of the formation of a lactone under the action of an acid generated from the component (A), and (b2) a unit having an alcoholic hydroxyl group.

Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.

Abstract: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

Abstract: There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein

Abstract: A negative resist composition is provided which is less likely to swell in an alkali developing solution. An alkali-developable negative resist composition is disclosed comprising a compound (A) which generates an acid upon exposure to radiation, and a resin component (B) which becomes insoluble in alkali under the action of an acid, wherein the component (B) is a resin component containing: (b1) a unit which becomes insoluble in an alkali solution as a result of the formation of a lactone under the action of an acid generated from the component (A), and (b2) a unit having an alcoholic hydroxyl group.

Abstract: The present invention provides a negative working resist composition comprising a diazosulfonic acid compound capable of generating an acid with irradiation of radiation and an organic amine compound. The negative working resist composition is excellent in sensitivity, resist pattern profile, and aging stability.

Abstract: Disclosed is a novel multilayered body for photolitho-graphic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising:

Abstract: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.

Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.

Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.