Patents by Inventor Miwako Nakahara
Miwako Nakahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100009862Abstract: The present invention aims to improve detecting accuracy and reproducibility of a biomolecule sensor. The biomolecule sensor of the present invention includes single probe molecules orderly aligned and fixed on grid points on the surface of a substrate. Accordingly, in the biomolecule sensor of the present invention: probe molecules for detecting a biomolecule are orderly aligned and separately fixed; blocking for preventing non-specific adsorption is applied to a region other than the region of the probe molecules for detecting a biomolecule; and fluorescence enhancement is achieved by metal microparticles.Type: ApplicationFiled: January 31, 2008Publication date: January 14, 2010Inventors: Miwako NAKAHARA, Takashi Inoue, Osamu Kogi
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Publication number: 20080095935Abstract: A biosensor is formed by immobilizing metal particles immobilized on a surface of a carrier and immobilizing probe molecules which are modified with fluorescent molecules on the metal particles. A biomolecule is detected at high sensitivity by use of this biosensor and utilizing fluorescence-quenching and fluorescence-enhancement effects attributable to the metal particle. In this way, it is possible to omit amplification of the biomolecule in a specimen and fluorescence-labeling on the biomolecule when detecting the biomolecule with the biosensor. It is also possible to improve quantitative reliability and repeatability of the biosensor.Type: ApplicationFiled: September 25, 2007Publication date: April 24, 2008Inventors: Miwako Nakahara, Takashi Inoue, Shinichi Taniguchi
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Publication number: 20080014581Abstract: A biosensor is formed by immobilizing metal particles immobilized on a surface of a carrier and immobilizing probe molecules which are modified with fluorescent molecules on the metal particles. A biomolecule is detected at high sensitivity by use of this biosensor and utilizing fluorescence-quenching and fluorescence-enhancement effects attributable to the metal particle. In this way, it is possible to omit amplification of the biomolecule in a specimen and fluorescence-labeling on the biomolecule when detecting the biomolecule with the biosensor. It is also possible to improve quantitative reliability and repeatability of the biosensor.Type: ApplicationFiled: February 2, 2007Publication date: January 17, 2008Inventors: Miwako Nakahara, Takashi Inoue, Shinichi Taniguchi
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Patent number: 7264677Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.Type: GrantFiled: October 19, 2005Date of Patent: September 4, 2007Assignee: Renesas Technology Corp.Inventors: Miwako Nakahara, Toshiyuki Arai, Shigeru Ohno, Takashi Yunogami, Sukeyoshi Tsunekawa, Kazuto Watanabe
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Publication number: 20070003945Abstract: When a biomolecule and a biochemical reactant are detected, a white interference method is used to conduct a noncontact and nondestructive detection, and further to conduct efficient and accurate detection. This method is applied to a biosensor element, whereby non-labeled and noncontact quality control can be achieved.Type: ApplicationFiled: November 10, 2005Publication date: January 4, 2007Inventors: Miwako Nakahara, Takashi Inoue, Tomonori Saeki, Osamu Kogi, Noriko Ban
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Publication number: 20070004027Abstract: When probe biomolecules are immobilized on a substrate surface, a surfactant (phase transfer catalyst) is added for reaction, whereby immobilization efficiency of the probe biomolecules and coating uniformity thereof are improved. Consequently, it is possible to dramatically improve quantitativity and reproducibility of the biosensor element.Type: ApplicationFiled: November 10, 2005Publication date: January 4, 2007Inventors: Miwako Nakahara, Takashi Inoue, Tomonori Saeki, Osamu Kogi, Noriko Ban
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Patent number: 7025896Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.Type: GrantFiled: June 13, 2003Date of Patent: April 11, 2006Assignee: Renesas Technology Corp.Inventors: Miwako Nakahara, Toshiyuki Arai, Shigeru Ohno, Takashi Yunogami, Sukeyoshi Tsunekawa, Kazuto Watanabe
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Publication number: 20060037627Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.Type: ApplicationFiled: October 19, 2005Publication date: February 23, 2006Inventors: Miwako Nakahara, Toshiyuki Arai, Shigeru Ohno, Takashi Yunogami, Sukeyoshi Tsunekawa, Kazuto Watanabe
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Patent number: 6905928Abstract: When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.Type: GrantFiled: May 9, 2002Date of Patent: June 14, 2005Assignee: Hitachi, Ltd.Inventors: Naoki Kanda, Arito Ogawa, Eisuke Nishitani, Miwako Nakahara, Tadanori Yoshida, Kiyoshi Ogata
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Patent number: 6870224Abstract: When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.Type: GrantFiled: August 15, 2003Date of Patent: March 22, 2005Assignee: Hitachi, Ltd.Inventors: Naoki Kanda, Arito Ogawa, Eisuke Nishitani, Miwako Nakahara, Tadanori Yoshida, Kiyoshi Ogata
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Patent number: 6861299Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.Type: GrantFiled: April 2, 2003Date of Patent: March 1, 2005Assignee: Hitachi, Ltd.Inventors: Kazuhiko Horikoshi, Klyoshi Ogata, Takuo Tamura, Miwako Nakahara, Makoto Ohkura, Ryoji Oritsuki, Yasushi Nakano, Takeo Shiba
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Patent number: 6815717Abstract: To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.Type: GrantFiled: November 20, 2001Date of Patent: November 9, 2004Assignee: Hitachi, Ltd.Inventors: Kazuhiko Horikoshi, Kiyoshi Ogata, Miwako Nakahara, Takuo Tamura, Yasushi Nakano, Ryoji Oritsuki, Toshihiko Itoga, Takahiro Kamo
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Publication number: 20040145001Abstract: When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.Type: ApplicationFiled: August 15, 2003Publication date: July 29, 2004Applicant: Hitachi, Ltd., IncorporationInventors: Naoki Kanda, Arito Ogawa, Eisuke Nishitani, Miwako Nakahara, Tadanori Yoshida, Kiyoshi Ogata
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Patent number: 6767760Abstract: To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.Type: GrantFiled: June 11, 2002Date of Patent: July 27, 2004Assignee: Hitachi, Ltd.Inventors: Kazuhiko Horikoshi, Kiyoshi Ogata, Miwako Nakahara, Takuo Tamura, Yasushi Nakano, Ryoji Oritsuki, Toshihiko Itoga, Takahiro Kamo
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Publication number: 20040051139Abstract: When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.Type: ApplicationFiled: August 15, 2003Publication date: March 18, 2004Applicant: Hitachi, LtdInventors: Naoki Kanda, Arito Ogawa, Eisuke Nishitani, Miwako Nakahara, Tadanori Yoshida, Kiyoshi Ogata
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Patent number: 6664184Abstract: A pretreatment in which impurities containing carbon are removed from a conductor film formed on a substrate is performed prior to an etching treatment of the conductor film. In this pretreatment, a gas containing oxygen, nitrogen, or a nitrogen oxide is irradiated with ultraviolet rays or electromagnetic waves, and this gas is supplied to the substrate surface, which has been heated to a temperature of 200° C. or lower. This allows a semiconductor device having at least one type of conductor film selected from among a ruthenium film, a ruthenium oxide film, an osmium film, and an osmium oxide film to be manufactured inexpensively and at a high level of quality.Type: GrantFiled: June 18, 2002Date of Patent: December 16, 2003Assignee: Hitachi, Ltd.Inventors: Miwako Nakahara, Sukeyoshi Tsunekawa, Kazuto Watanabe
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Publication number: 20030205553Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.Type: ApplicationFiled: June 13, 2003Publication date: November 6, 2003Inventors: Miwako Nakahara, Toshiyuki Arai, Shigeru Ohno, Takashi Yunogami, Sukeyoshi Tsunekawa, Kazuto Watanabe
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Publication number: 20030189205Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.Type: ApplicationFiled: April 2, 2003Publication date: October 9, 2003Inventors: Kazuhiko Horikoshi, Klyoshi Ogata, Takuo Tamura, Miwako Nakahara, Makoto Ohkura, Ryoji Oritsuki, Yasushi Nakano, Takeo Shiba
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Publication number: 20030183901Abstract: When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.Type: ApplicationFiled: May 9, 2002Publication date: October 2, 2003Applicant: Hitachi, Ltd.Inventors: Naoki Kanda, Arito Ogawa, Eisuke Nishitani, Miwako Nakahara, Tadanori Yoshida, Kiyoshi Ogata
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Patent number: 6613242Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.Type: GrantFiled: October 23, 2001Date of Patent: September 2, 2003Inventors: Miwako Nakahara, Toshiyuki Arai, Shigeru Ohno, Takashi Yunogami, Sukeyoshi Tsunekawa, Kazuto Watanabe