Abstract: To provide an airflow amount measuring device capable of accurately measuring a flow amount of air without occurrence of warpage in a thin film portion when an airflow measuring element is mounted on a lead frame to form a resin-sealed package in which the airflow amount measuring element and the lead frame are sealed. A chip package includes a lead frame, an element mounted on the lead frame and having a detection portion, and a structure for sealing the lead frame and the element such that at least the detection portion is exposed. Then, the curvature radius ? of the exposed portion of the element exposed from the sealing resin member is 2.13 or less.

Abstract: The objective of the present invention is to obtain a flow rate measurement device capable of reducing variations in the flow rate detection accuracy by suppressing the inclination of a chip package relative to a circuit board. A flow rate measurement device 20 of the present invention includes a chip package 310 having a flow rate sensor 311 and a passage wall 314 formed therein, and a circuit board 300 on which the chip package 310 is mounted, in which the chip package 310 is mounted such that the flow rate sensor 311 faces a portion of the circuit board 300 and a portion of the passage wall 314 as a resin portion of the chip package 310 contacts the circuit board 300.

Abstract: It is an object to provide a highly reliable physical-quantity measurement device which can relax thermal stress at a time of bonding and suppress creep or drift of a sensor output. To attain the above-described object, a physical-quantity measurement device according to the present invention includes a semiconductor element, and a base board connected to the semiconductor element with a plurality of layers being interposed. In the plurality of layers, a stress relaxing layer including at least metal as a main ingredient and a glass layer including glass as a main ingredient are formed each in a layered form including one or more layers. At least one of the stress relaxing layer and the glass layer includes low-melting-point glass, and a softening point of the low-melting-point glass is equal to or lower than the highest heat temperature that the semiconductor element can resist.