Patents by Inventor Mizuki NISHIOKA

Mizuki NISHIOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Information collection device and information collection method
    Patent number: 11958494
    Abstract: An acquisition unit acquires pieces of information including information related to a vehicle, information related to the environment inside and outside the vehicle, and information related to a driver on board the vehicle. A determination unit determines priorities of the pieces of information acquired by the acquisition unit on the basis of a service or the like used by the driver among services or the likes provided using information accumulated in a server device. A selection unit selects a piece of information to be transmitted to the server device from among the pieces of information acquired by the acquisition unit on the basis of the priorities determined by the determination unit. A communication unit transmits the piece of information selected by the selection unit to the server device.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: April 16, 2024
    Assignee: Mitsubishi Electric Corporation
    Inventors: Masanobu Osawa, Daisuke Fushiki, Takuji Morimoto, Takumi Sato, Hiroyoshi Shibata, Tetsuro Nishioka, Mizuki Higuchi, Shogo Okamoto
  • Method of manufacturing nitride semiconductor element
    Patent number: 9559253
    Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: January 31, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Junya Narita, Yohei Wakai, Kazuto Okamoto, Mizuki Nishioka
  • METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
    Publication number: 20150118775
    Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.
    Type: Application
    Filed: October 29, 2014
    Publication date: April 30, 2015
    Applicant: NICHIA CORPORATION
    Inventors: Junya NARITA, Yohei WAKAI, Kazuto OKAMOTO, Mizuki NISHIOKA