Patents by Inventor Mizuki Sato
Mizuki Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11958494Abstract: An acquisition unit acquires pieces of information including information related to a vehicle, information related to the environment inside and outside the vehicle, and information related to a driver on board the vehicle. A determination unit determines priorities of the pieces of information acquired by the acquisition unit on the basis of a service or the like used by the driver among services or the likes provided using information accumulated in a server device. A selection unit selects a piece of information to be transmitted to the server device from among the pieces of information acquired by the acquisition unit on the basis of the priorities determined by the determination unit. A communication unit transmits the piece of information selected by the selection unit to the server device.Type: GrantFiled: June 18, 2018Date of Patent: April 16, 2024Assignee: Mitsubishi Electric CorporationInventors: Masanobu Osawa, Daisuke Fushiki, Takuji Morimoto, Takumi Sato, Hiroyoshi Shibata, Tetsuro Nishioka, Mizuki Higuchi, Shogo Okamoto
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Patent number: 11937475Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: March 10, 2023Date of Patent: March 19, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20230209940Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: March 10, 2023Publication date: June 29, 2023Inventor: Mizuki SATO
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Patent number: 11655390Abstract: The present invention provides a coating fluid including: a hydroxy group-containing resin; an inorganic layered compound; and a liquid medium, in which a ratio (outflow time (B)/outflow time (A)) of outflow time (B) of a coating fluid at 5° C. measured by a Zahn cup to outflow time (A) of a coating fluid at 24° C. measured by a Zahn cup is 1.40 or less.Type: GrantFiled: November 5, 2018Date of Patent: May 23, 2023Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Nobuhiro Oosaki, Mizuki Sato, Daisuke Shibata
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Patent number: 11605696Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: November 25, 2020Date of Patent: March 14, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20220332947Abstract: A polyamideimide resin containing a structural unit (Ia) represented by a formula shown below, and a structural unit (IIa) represented by a formula shown below. In the formula (Ia), each X independently represents a hydrogen atom, or at least one substituent selected from the group consisting of halogen atoms, alkyl groups of 1 to 9 carbon, atoms, and alkoxy groups and hydroxyalkyl groups of 1 to 9 carbon atoms. In the formula (IIa), each R independently represents a hydrogen atom, or at least one substituent selected from the group consisting of alkyl groups of 1 to 9 carbon atoms, alkoxy groups of 1 to 9 carbon atoms and halogen atoms, and n represents an integer of 1 to 6.Type: ApplicationFiled: August 31, 2020Publication date: October 20, 2022Inventors: Gaku HASHIMOTO, Daichi TAKEMORI, Eiichi SATOH, Mizuki SATO
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Publication number: 20210151545Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: November 25, 2020Publication date: May 20, 2021Inventor: Mizuki SATO
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Patent number: 10854704Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: March 30, 2020Date of Patent: December 1, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20200270476Abstract: The present invention provides a coating fluid including: a hydroxy group-containing resin; an inorganic layered compound; and a liquid medium, in which a ratio (outflow time (B)/outflow time (A)) of outflow time (B) of a coating fluid at 5° C. measured by a Zahn cup to outflow time (A) of a coating fluid at 24° C. measured by a Zahn cup is 1.40 or less.Type: ApplicationFiled: November 5, 2018Publication date: August 27, 2020Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Nobuhiro OOSAKI, Mizuki SATO, Daisuke SHIBATA
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Publication number: 20200227513Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: March 30, 2020Publication date: July 16, 2020Inventor: Mizuki SATO
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Patent number: 10692961Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: December 18, 2019Date of Patent: June 23, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20200127074Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: December 18, 2019Publication date: April 23, 2020Inventor: Mizuki SATO
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Patent number: 10586842Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: January 7, 2019Date of Patent: March 10, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20190157374Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: January 7, 2019Publication date: May 23, 2019Inventor: Mizuki SATO
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Patent number: 10181506Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: January 19, 2018Date of Patent: January 15, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20180145126Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: January 19, 2018Publication date: May 24, 2018Inventor: Mizuki SATO
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Patent number: 9941346Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: GrantFiled: February 1, 2017Date of Patent: April 10, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Mizuki Sato
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Publication number: 20170179213Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.Type: ApplicationFiled: March 3, 2017Publication date: June 22, 2017Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuyuki Takahashi, Mizuki SATO
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Publication number: 20170141178Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.Type: ApplicationFiled: February 1, 2017Publication date: May 18, 2017Inventor: Mizuki SATO
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Patent number: 9590153Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.Type: GrantFiled: January 31, 2014Date of Patent: March 7, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuyuki Takahashi, Mizuki Sato