Abstract: There is provided a structure of a nano memory system. The disclosed unit nano memory cell comprises a single isolated nanoparticle placed on the surface of a semiconductor substrate (301) and an adjacent nano-Schottky contact (303). The nanoparticle works as a storage site where the nano-Schottky contact (303) works as a source or a drain of electrons, in or out of the semiconductor substrate (301), at a relatively small voltage. The electric current through the nano-Schottky contact (303) can be turned on (reading 1) or off (reading 0) by charging or discharging the nanoparticle. Since the electric contact is made by a nano-Scottky contact (303) on the surface and the back contact of the substrate (301), and the charge is stored in a very small nanoparticle, this allows to attain the ultimate device down-scaling. This would also significantly increase the number of nano memory cells on a chip.

Abstract: A new devices structure of nano tunneling field effect transistor based on nano metal particles is introduced. The nano semiconductor device, comprising a source and a drain, wherein each of the source and drain comprise an implanted nano cluster of metal atoms, wherein the implanted nano cluster of metal atoms forming the source has an average radius in the range from about 1 to about 2 nanometers, and the implanted nano cluster of metal atoms forming the drain has an average radius in the range from about 2 to about 4 nanometers. Processes for producing the nano semiconductor device are detailed.

Abstract: A new devices structure of nano tunneling field effect transistor based on nano metal particles is introduced. The nano semiconductor device, comprising a source and a drain, wherein each of the source and drain comprise an implanted nano cluster of metal atoms, wherein the implanted nano cluster of metal atoms forming the source has an average radius in the range from about 1 to about 2 nanometers, and the implanted nano cluster of metal atoms forming the drain has an average radius in the range from about 2 to about 4 nanometers. Processes for producing the nano semiconductor device are detailed.

Abstract: Method of fabricating super nano ion-electron source including: placing an assembly of precursor tip and metal ring around the precursor tip below the apex in a FIM chamber; applying dc current from grounded source to the metal ring to heat the ring; gradually applying high voltage to the precursor tip; wherein the metal ring is exposed to a high electric field from the tip, generating Schottky field emission of electrons from the metal ring, the applied electrical field sufficient to cause electrons to be extracted from the metal ring and accelerated to the shank with energy sufficient to dislodge atoms from the shank; and monitoring the evolution of the tip apex due to movement of dislodged atoms from the shank to the apex while adjusting the electrical field, the current or temperature of the metal ring until the apex forms a sharp nanotip with an atomic scale apex.

Abstract: Method of fabricating super nano ion-electron source including: placing an assembly of precursor tip and metal ring around the precursor tip below the apex in a FIM chamber; applying dc current from grounded source to the metal ring to heat the ring; gradually applying high voltage to the precursor tip; wherein the metal ring is exposed to a high electric field from the tip, generating Schottky field emission of electrons from the metal ring, the applied electrical field sufficient to cause electrons to be extracted from the metal ring and accelerated to the shank with energy sufficient to dislodge atoms from the shank; and monitoring the evolution of the tip apex due to movement of dislodged atoms from the shank to the apex while adjusting the electrical field, the current or temperature of the metal ring until the apex forms a sharp nanotip with an atomic scale apex.