Patents by Inventor Mohamed Elgebaly

Mohamed Elgebaly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240118740
    Abstract: A method and system of tuning a voltage regulator including receiving, at a voltage regulator, workload information for a workload to be executed by a processor that receives power from the voltage regulator; setting at least one of a load line value for the voltage regulator, a setpoint voltage supplied by the voltage regulator to the processor, or a phase shedding configuration of the voltage regulator based on the workload information; and sending to the processor, after the setting is complete, an acknowledgement signal indicating that the workload can proceed.
    Type: Application
    Filed: October 6, 2022
    Publication date: April 11, 2024
    Inventors: Houle Gan, Shuai Jiang, Sanjay Nilamboor, Rammohan Padmanabhan, Mohamed Elgebaly
  • Publication number: 20190260808
    Abstract: An apparatus and method that converts and transmits cell-network communications (mobile calls and messages) to Voice-over-Internet Protocol (VoIP) calls and messages, and vice versa, for those traveling outside their cell network. The system uses a server that authenticates the electronic device and offers other services; and a device software application. The invention converts and transmits cell-network (e.g., GSM) communications to Voice-over-Internet-Protocol (VoIP) calls and messages and vice versa—converting VOIP calls and messages to cell-network communications.
    Type: Application
    Filed: February 19, 2019
    Publication date: August 22, 2019
    Inventor: Amr Mohamed Elgebaly Saad Elghandour
  • Patent number: 7944266
    Abstract: A low-voltage level converter provides level conversion for multiple-supply voltages for very large scale integration (VLSI) systems. Low voltage-level down conversion is achieved at very low voltage operation for on-chip test circuitry for multiple-supply voltage systems. The converter includes an output driver PMOS FET (positive metal-oxide semiconductor field effect transistor) with its well grounded. An output NMOS FET (negative MOS FET) and an extra input pulldown NMOS FET are connected in parallel to the input of the converter. The extra input pulldown NMOS FET provides a negative gate voltage at its drain to the output driver PMOS FET gate. The negative gate voltage and grounded well significantly decrease rise time of the output signal noise pulse of the converter and virtually eliminate a negative spike voltage at the initial transition of the output pulse produced by coupling effect between the input pulse and output pulse due to Miller capacitance effect.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: May 17, 2011
    Assignee: QUALCOMM Incorporated
    Inventor: Mohamed Elgebaly
  • Patent number: 7583555
    Abstract: A method and apparatus for voltage regulation uses, in one aspect, worst-case supply voltages specific to the process split of the integrated device at issue. In another aspect, a two-phase voltage regulation system and method identifies the characterization data pertinent to a family of integrated circuit devices in a first phase, and identifies an associated process split of a candidate integrated circuit device in a second phase. The characterization data from the first phase is then used to provide supply voltages that correspond to target frequencies of operation for the candidate device. In another aspect, a hybrid voltage regulator circuit includes an open loop circuit which automatically identifies the process split of the integrated circuit device and allows a regulator to modify supply voltage based on characterization data specific to that process split, and a closed loop circuit which fine-tunes the supply voltage.
    Type: Grant
    Filed: March 30, 2004
    Date of Patent: September 1, 2009
    Assignee: QUALCOMM Incorporated
    Inventors: Inyup Kang, Karthikeyan Ethirajan, Matthew Levi Severson, Mohamed Elgebaly, Manoj Sachdev, Amr Fahim
  • Patent number: 7417482
    Abstract: Techniques for adaptively scaling voltage for a processing core are described. In one scheme, the logic speed and the wire speed for the processing core are characterized, e.g., using a ring oscillator having multiple signal paths composed of different circuit components. A target clock frequency for the processing core is determined, e.g., based on computational requirements for the core. A replicated critical path is formed based on the characterized logic speed and wire speed and the target clock frequency. This replicated critical path emulates the actual critical path in the processing core and may include different types of circuit components such as logic cells with different threshold voltages, dynamic cells, bit line cells, wires, drivers with different threshold voltages and/or fan-outs, and so on. The supply voltage for the processing core and the replicated critical path is adjusted such that both achieve the desired performance.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: August 26, 2008
    Assignee: QUALCOMM Incorporated
    Inventors: Mohamed Elgebaly, Khurram Zaka Malik, Lew G. Chua-Eoan, Seong-Ook Jung
  • Publication number: 20070096775
    Abstract: Techniques for adaptively scaling voltage for a processing core are described. In one scheme, the logic speed and the wire speed for the processing core are characterized, e.g., using a ring oscillator having multiple signal paths composed of different circuit components. A target clock frequency for the processing core is determined, e.g., based on computational requirements for the core. A replicated critical path is formed based on the characterized logic speed and wire speed and the target clock frequency. This replicated critical path emulates the actual critical path in the processing core and may include different types of circuit components such as logic cells with different threshold voltages, dynamic cells, bit line cells, wires, drivers with different threshold voltages and/or fan-outs, and so on. The supply voltage for the processing core and the replicated critical path is adjusted such that both achieve the desired performance.
    Type: Application
    Filed: November 22, 2005
    Publication date: May 3, 2007
    Inventors: Mohamed Elgebaly, Khurram Malik, Lew Chua-Eoan, Seong-Ook Jung
  • Publication number: 20070069796
    Abstract: A low-voltage level converter provides level conversion for multiple-supply voltages for very large scale integration (VLSI) systems. Low voltage-level down conversion is achieved at very low voltage operation for on-chip test circuitry for multiple-supply voltage systems. The converter includes an output driver PMOS FET (positive metal-oxide semiconductor field effect transistor) with its well grounded. An output NMOS FET (negative MOS FET) and an extra input pulldown NMOS FET are connected in parallel to the input of the converter. The extra input pulldown NMOS FET provides a negative gate voltage at its drain to the output driver PMOS FET gate. The negative gate voltage and grounded well significantly decrease rise time of the output signal noise pulse of the converter and virtually eliminate a negative spike voltage at the initial transition of the output pulse produced by coupling effect between the input pulse and output pulse due to Miller capacitance effect.
    Type: Application
    Filed: September 29, 2005
    Publication date: March 29, 2007
    Inventor: Mohamed Elgebaly