Abstract: Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 ?m l/s fine pitch patterning.

Abstract: Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 ?m l/s fine pitch patterning.

Abstract: A system includes an inert gas supply, a soak chamber, a test chamber, a transfer zone, and a heater. The soak chamber soaks an integrated circuit (IC) device in the inert gas prior to testing. The test chamber includes contact pins for testing the IC device in the inert gas by contacting the contact pins to leads of the IC device. The transfer zone is to transfer the IC device from the soak chamber to the test chamber. The heater heats the inert gas supplied to the soak chamber and the test chamber.

Abstract: A system includes an inert gas supply, a soak chamber, a test chamber, a transfer zone, and a heater. The soak chamber soaks an integrated circuit (IC) device in the inert gas prior to testing. The test chamber includes contact pins for testing the IC device in the inert gas by contacting the contact pins to leads of the IC device. The transfer zone is to transfer the IC device from the soak chamber to the test chamber. The heater heats the inert gas supplied to the soak chamber and the test chamber.

Abstract: A polymer layer on a substrate may be treated with ozone gas or with deionized water and ozone gas to increase a removal rate of the polymer layer in a chemical mechanical polishing (CMP) process. The ozone gas may be diffused directly into the polymer layer or through a thin layer of deionized water on the surface of the polymer layer and into the polymer layer. The deionized water may also be heated during the process to further enhance the diffusion of the ozone gas into the polymer layer.

Abstract: The present invention relates to diarylheptanoid compounds and compositions comprising a diarylheptanoid compound. The present invention also relates to methods for preventing or treating various diseases and disorders by administering to a subject in need thereof one or more diarylheptanoid compounds. In particular, the invention relates to methods for preventing or treating cancer or an inflammatory disorder by administering to a subject in need thereof one or more diarylheptanoid compounds. The present invention further relates to articles of manufacture comprising one or more diarylheptanoid compounds.

Abstract: The present invention provides methods for reducing the production of nitric oxide, inducible nitric oxide synthase protein and mRNA, and cyclooxygenase-2 protein and mRNA in cells both in vivo and in vitro via the administration of extracts and compounds derived from the seeds of Pycnanthus angolensis Warb. (P. Kombo), commonly known as African nutmeg. These extracts and compounds, namely, kombo butter, kombo butter acid extract, sargaquinoic acid, sargachromenol, and sargahydroquinoic acid, are also useful in the treatment and prevention of a battery of adverse health conditions in human, animal, and avian subjects that are advanced by the production of nitric oxide or its metabolites and/or by the activity of cyclooxygenase-2. Methods for the isolation of kombo butter acid extracts are also provided.