Abstract: A substrate handling system includes a fixed deposition ring having a plurality of circumferentially spaced notches along an outer edge of the fixed deposition ring, the fixed deposition ring being electrically non-conductive; a moving deposition ring having a plurality of circumferentially spaced recesses formed on a lower surface of the moving deposition ring, the recesses configured to radially align with the notches of the fixed deposition ring, the moving deposition ring having an inner edge and an outer edge, the moving deposition ring being electrically non-conductive; and a plurality of electrically conductive grounding plates each having a base, an intermediate member, and a contact extending from the intermediate member and being spaced from the base, the intermediate members configured to be received in the recesses and extend between the inner edge and the outer edge of the moving deposition ring.

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: Wind turbine rotor blade with reduced trailing edge noise A wind turbine rotor blade is described, the rotor blade extending in a spanwise direction between a root end and a tip end, and extending in a chordwise direction between a leading edge and a trailing edge. The rotor blade comprises a series of serrations projecting from the trailing edge, each serration extending from a base to a tip to define a length of the serration. The rotor blade also comprises a respective distinct set of fins associated with, and arranged adjacent to, each of the serrations, each fin projecting from a surface of the blade and extending between a leading end and a trailing end to define a length of the fin. Each set of fins comprises multiple fins whose trailing ends are in spanwise alignment with, and are located at or upstream of, the base of the serration associated with the set.

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

Abstract: A wind turbine rotor blade that has a rotor blade tip, a rotor blade root, a suction side, a pressure side, a rotor blade length, a profile depth and a pitch axis of rotation. The profile depth decreases along the rotor blade length from the rotor blade root to the rotor blade tip. The trailing edge has a trailing edge delimiting line, which replicates the contour of the trailing edge. The trailing edge has a plurality of serrations to improve flow behavior at the trailing edge. The serrations respectively have a serration tip, two serration edges and an angle bisector. The serration edges are provided non-parallel to a direction of incident flow that is perpendicular to the pitch axis of rotation. The serration edges are non-perpendicular to a tangent to the trailing edge delimiting line. The trailing edge delimiting line has a plurality of portions, at least one of the portions extending non-parallel to the pitch axis of rotation.

Abstract: A trailing edge for a rotor blade tip of an aerodynamic rotor of a wind turbine. The trailing edge comprises a trailing edge delimiting line, which replicates the contour of the trailing edge, and multiple serrations to improve flow behavior at the trailing edge. The serrations are provided at the trailing edge in dependence on the trailing edge delimiting line, and consequently on geometrical and operating parameters.

Abstract: A wind turbine rotor blade including a suction side, a pressure side, a blunt trailing edge, and a trailing edge enlargement unit arranged at the blunt trailing edge and has at least two stages. The trailing edge enlargement unit has a first portion and a second portion, where a transition from the blunt trailing edge to the first portion is substantially non-perpendicular and a transition between the first and second portions is also non-perpendicular.

Abstract: A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

Abstract: A wind turbine rotor blade including a suction side, a pressure side, a blunt trailing edge, and a trailing edge enlargement unit arranged at the blunt trailing edge and has at least two stages. The trailing edge enlargement unit has a first portion and a second portion, where a transition from the blunt trailing edge to the first portion is substantially non-perpendicular and a transition between the first and second portions is also non-perpendicular.

Abstract: A method for calculating a trailing edge that is to be produced for a rotor blade of an aerodynamic rotor of a wind power installation, wherein the rotor blade has radial positions with respect to the rotor, the rotor blade has a local blade profile that is a function of the radial positions with respect to the rotor and the trailing edge has a jagged profile having a plurality of spikes, wherein each spike has a spike height and a spike width, and the spike height and/or the spike width is calculated as a function of the radial position thereof and/or as a function of the local blade profile of the radial position thereof.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.

Abstract: A wind turbine rotor blade that has a rotor blade tip, a rotor blade root, a suction side, a pressure side, a rotor blade length, a profile depth and a pitch axis of rotation. The profile depth decreases along the rotor blade length from the rotor blade root to the rotor blade tip. The trailing edge has a trailing edge delimiting line, which replicates the contour of the trailing edge. The trailing edge has a plurality of serrations to improve flow behaviour behavior at the trailing edge. The serrations respectively have a serration tip, two serration edges and an angle bisector. The serration edges are provided non-parallel to a direction of incident flow that is perpendicular to the pitch axis of rotation. The serration edges are non-perpendicular to a tangent to the trailing edge delimiting line. The trailing edge delimiting line has a plurality of portions, at least one of the portions extending non-parallel to the pitch axis of rotation.

Abstract: A trailing edge for a rotor blade tip of an aerodynamic rotor of a wind turbine. The trailing edge comprises a trailing edge delimiting line, which replicates the contour of the trailing edge, and multiple serrations to improve flow behavior at the trailing edge. The serrations are provided at the trailing edge in dependence on the trailing edge delimiting line, and consequently on geometrical and operating parameters.

Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.