Abstract: A system for switching between an optical pellicle and an EUV pellicle includes one or more inspection tools configured to perform one or more inspection processes on a mask. The system includes one or more extreme ultraviolet (EUV) lithography tools configured to perform one or more lithographic exposures on the mask. The system includes a dual pellicle handler operatively coupled to the one or more inspection tools and the one or more EUV lithography tools, wherein the dual pellicle handler is configured to attach at least one of an optical pellicle or an EUV pellicle to the mask, wherein the dual pellicle handler is configured to detach at least one of the optical pellicle or the EUV pellicle from the mask.

Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field is recovered for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle. The recovered reticle near field is then used to determine whether the test reticle or another reticle will likely result in unstable wafer pattern or a defective wafer.

Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field is recovered for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle. The recovered reticle near field is then used to determine whether the test reticle or another reticle will likely result in unstable wafer pattern or a defective wafer.

Abstract: A method and system for performing model-based registration and critical dimension measurement is disclosed. The method includes: utilizing an imaging device to obtain at least one optical image of a measurement site specified for a photomask; retrieving a design of photomask and utilizing a computer model of the imaging device to generate at least one simulated image of the measurement site; adjusting at least one parameter of the computer model to minimize dissimilarities between the simulated images and the optical images, wherein the parameters includes at least a pattern registration parameter or a critical dimension parameter; and reporting the pattern registration parameter or the critical dimension parameter of the computer model when dissimilarities between the simulated images and the optical images are minimized.

Abstract: An imaging system includes a positionable device configured to axially shift an image plane, wherein the image plane is generated from photons emanating from an object and passing through a lens, a detector plane positioned to receive the photons of the object that pass through the lens, and a computer programmed to characterize the lens as a mathematical function, acquire two or more elemental images of the object with the image plane of each elemental image at different axial positions with respect to the detector plane, determine a focused distance of the object from the lens, based on the characterization of the lens and based on the two or more elemental images acquired, and generate a depth map of the object based on the determined distance.

Abstract: A method and system for performing model-based registration and critical dimension measurement is disclosed. The method includes: utilizing an imaging device to obtain at least one optical image of a measurement site specified for a photomask; retrieving a design of photomask and utilizing a computer model of the imaging device to generate at least one simulated image of the measurement site; adjusting at least one parameter of the computer model to minimize dissimilarities between the simulated images and the optical images, wherein the parameters includes at least a pattern registration parameter or a critical dimension parameter; and reporting the pattern registration parameter or the critical dimension parameter of the computer model when dissimilarities between the simulated images and the optical images are minimized.

Abstract: An imaging system includes a positionable device configured to axially shift an image plane, wherein the image plane is generated from photons emanating from an object and passing through a lens, a detector plane positioned to receive the photons of the object that pass through the lens, and a computer programmed to characterize the lens as a mathematical function, acquire two or more elemental images of the object with the image plane of each elemental image at different axial positions with respect to the detector plane, determine a focused distance of the object from the lens, based on the characterization of the lens and based on the two or more elemental images acquired, and generate a depth map of the object based on the determined distance.