Abstract: Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via ink jet deposition processes. The CNT ink is dispensed into wells formed in a cathode structure.

Abstract: Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via ink jet deposition processes. The CNT ink is dispensed into wells formed in a cathode structure.

Abstract: Nanoparticles are coated using thick-film techniques with a catalyst to promote the growth of carbon nanotubes thereon. In one example, alumina nanoparticles are coated with a copper catalyst. Such nanoparticles can be selectively deposited onto a substrate to create a field emission cathode, which can then be utilized within field emission devices.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd-Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.

Abstract: A triode structure code cathode assembly is produced by depositing a carbon emitter material onto a substrate to form a cathode structure. Then, an insulating layer is deposited onto one side of a mesh foil to form a mesh assembly. This mesh assembly is then mechanically attached to the cathode structure so that the insulating layer on the one side of the mesh assembly is contacting the cathode structure. This entire triode cathode assembly can then be used to produce a field emission display device by including an anode structure.

Abstract: Particles, which may include nanoparticles, are mixed with carbon nanotubes and deposited on a substrate to form a cold cathode. The particles enhance the field emission characteristics of the carbon nanotubes. An additional activation step may be performed on the deposited carbon nanotube mixture to further enhance the emission of electrons.

Abstract: Nanoparticles are coated using thick-film techniques with a catalyst to promote the growth of carbon nanotubes thereon. In one example, alumina nanoparticles are coated with a copper catalyst. Such nanoparticles can be selectively deposited onto a substrate to create a field emission cathode, which can then be utilized within field emission devices.

Abstract: A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.

Abstract: A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode substantially completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.

Abstract: A light influencing display is provided which has a plurality of pixel group, each pixel of which includes a first electrode formed on a first surface and an opposing, second electrode formed on a second surface. A separate three terminal control device of deposited semiconductor material is formed on the first surface in association with each pixel. Each control device has a control terminal and two current path terminals, a first of which is connected to the first electrode of the control device's associated pixel. A voltage supply lead is formed on the first surface in association with each pixel group, and is connected to the second current path terminals associated with its pixel group. Similarly, a control lead is formed on the first surface in association with each pixel group, and is connected to the control terminals associated with its pixel group.

Abstract: Methods for producing field effect transistors having short current-conduction channels and reduced parasitic capacitance are disclosed. The methods allow the channel length to be substantially less than the minimum feature size of the photolithographic mask if desired, thereby enabling very short channel length transistors to be formed using conventional ten micron photolithography.