Abstract: The present invention relates to a high heat-dissipating, high strength aluminum alloy, more particularly to an aluminum alloy containing, as essential components, manganese (Mn), silicon (Si) and magnesium (Mg) at a predetermined content ratio and further containing one or more metal selected from a group consisting of copper (Cu), iron (Fe), zirconium (Zr), chromium (Cr) and titanium (Ti) at a predetermined content ratio, with the remainder being aluminum (Al) and inevitable impurities. The aluminum alloy provided by the present invention has very superior heat-dissipating property and strength and, therefore, can be used as a heat-dissipating material and also as a material for electric/electronic device packaging, a peripheral material for power devices and a material for heat exchangers for use in various applications including transportation such as electric vehicles, hybrid vehicles, gasoline vehicles, etc., energy such as solar generation, etc.

Abstract: Disclosed herein is a heat-dissipating substrate in order to improve heat-dissipating characteristics. The heat-dissipating substrate, comprising: a copper layer having a predetermined thickness; anodized insulating layers formed on upper and lower surfaces of the copper layer; and aluminum (Al) layers formed between the copper layer and the anodized insulating layer. Therefore, a heat-dissipating function of the base made of the aluminum (Al) layer and the copper (Cu) layer is improved, thereby making it possible to provide a high-output metal substrate appropriate for high-integration/high capacity electronic components.

Abstract: A Ti--Al system intermetallic compound comprised of 25 at. % to 75 at. % of aluminum and the remainder of titanium. The compound includes 0.004 at. % to 1.0 at. % each of at least one halogen element selected from the group consisting of fluorine, chlorine, bromine and iodine. Alternatively, to provide a Ti--Al system intermetallic compound with oxidation resistance, the surface of the Ti--Al system intermetallic compound is heated to 800.degree. C. to 1125.degree. C. in a mixture of gas including 2 ppm to 1% by volume of at least one halogen element selected from the group consisting of fluorine, chlorine, bromine and iodine, and also including 0.1% by volume or more of oxygen. Thus, a dense aluminum oxide film is formed on the surface of the intermetallic compound. Alternatively, to form the dense aluminum oxide film, at least one halogen element is first disposed on the part providing the oxidation resistance of the intermetallic compound, and heated for 0.2 hour or longer at 800.degree. C. to 1125.degree.

Abstract: Ti powders and Al powders are combined to prepare a mixture of 40.about.55 at % of Al and the balance of Ti. After CIP and degassing, plastic working by hot extrusion is applied to form a shaped mixture of Ti and Al. The shaped mixture is then processed by HIP to synthesize titanium aluminide while diffusing Al into the Ti structure to form an Al.sub.2 O.sub.3 phase occurring from both the reaction between Al and oxygen contained in the Ti structure and the oxides on the Al surface, and to disperse the Al.sub.2 O.sub.3 to form the Al.sub.2 O.sub.3 protective film. With the reaction between Al and oxygen contained in the Ti structure and with the "Pegging" effect, both the Al.sub.2 O.sub.3 a phase formed at the grain boundaries of crystals or in the crystal grains of titanium aluminide and the Al.sub.2 O.sub.3 phase existing on the surface of raw material Al powder peg the surface Al.sub.2 O.sub.3 film to the surface of the titanium aluminide body.