Abstract: Methods of forming an organic thin film transistor are provided. The methods include providing a substrate and depositing and patterning a gate electrode on a first surface of the substrate. The methods include dispensing a first droplet of an insulating material on the gate electrode on the substrate and dispensing a second droplet of a semiconductor material on a first surface of the first droplet. The second droplet forms a hydrophobic structure having a central cavity. The methods also include dispensing a third droplet of a conductor material on a first surface of the second droplet such that the conductor material substantially fills the central cavity of the hydrophobic structure and forms a conductor material layer around the central cavity to define a source electrode and a drain electrode of the organic thin film transistor.

Abstract: Methods of forming an organic thin film transistor are provided. The methods include providing a substrate and depositing and patterning a gate electrode on a first surface of the substrate. The methods include dispensing a first droplet of an insulating material on the gate electrode on the substrate and dispensing a second droplet of a semiconductor material on a first surface of the first droplet. The second droplet forms a hydrophobic structure having a central cavity. The methods also include dispensing a third droplet of a conductor material on a first surface of the second droplet such that the conductor material substantially fills the central cavity of the hydrophobic structure and forms a conductor material layer around the central cavity to define a source electrode and a drain electrode of the organic thin film transistor.

Abstract: Optoelectronic devices and methods for their fabrication having enhanced and controllable rates of the radiative relaxation of triplet light emitters are provided exemplified by organic light emitting devices based on phosphorescent materials with enhanced emission properties. Acceleration of the radiative processes is achieved by the interaction of the light emitting species with surface plasmon resonances in the vicinity of metal surfaces. Non-radiative Förster-type processes are efficiently suppressed by introducing a transparent dielectric or molecular layer between the metal surface and the chromophore. For materials with low emission oscillator strengths (such as triplet emitters), the optimal separation distance from the metal surface is determined, thus suppressing energy transfer and achieving a significant acceleration of the emission rate.

Abstract: Optoelectronic devices and methods for their fabrication having enhanced and controllable rates of the radiative relaxation of triplet light emitters are provided exemplified by organic light emitting devices based on phosphorescent materials with enhanced emission properties. Acceleration of the radiative processes is achieved by the interaction of the light emitting species with surface plasmon resonances in the vicinity of metal surfaces. Non-radiative Förster-type processes are efficiently suppressed by introducing a transparent dielectric or molecular layer between the metal surface and the chromophore. For materials with low emission oscillator strengths (such as triplet emitters), the optimal separation distance from the metal surface is determined, thus suppressing energy transfer and achieving a significant acceleration of the emission rate.