Patents by Inventor Monique Mcintosh

Monique Mcintosh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11185815
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: November 30, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Michael S. Cox, Monique McIntosh, Colin John Dickinson, Paul E. Fisher, Yutaka Tanaka, Zheng Yuan
  • Patent number: 10449486
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Michael S. Cox, Monique McIntosh, Colin John Dickinson, Paul E. Fisher, Yutaka Tanaka, Zheng Yuan
  • Publication number: 20190022577
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Application
    Filed: April 13, 2017
    Publication date: January 24, 2019
    Inventors: Michael S. COX, Monique MCINTOSH, Colin John DICKINSON, Paul E. FISHER, Yutaka TANAKA, Zheng YUAN
  • Publication number: 20180318758
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Application
    Filed: July 9, 2018
    Publication date: November 8, 2018
    Inventors: Michael S. COX, Monique MCINTOSH, Colin John DICKINSON, Paul E. FISHER, Yutaka TANAKA, Zheng YUAN
  • Publication number: 20170216767
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Application
    Filed: April 13, 2017
    Publication date: August 3, 2017
    Inventors: Michael S. COX, Monique MCINTOSH, Colin John DICKINSON, Paul E. FISHER, Yutaka TANAKA, Zheng YUAN
  • Patent number: 9649592
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: May 16, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Michael S. Cox, Monique McIntosh, Colin John Dickinson, Paul E. Fisher, Yutaka Tanaka, Zheng Yuan
  • Publication number: 20160276179
    Abstract: Embodiments enclosed herein relate to methods and apparatus for reducing nitrogen oxides (NOx) produced during processing, such as during semiconductor fabrication processing. A processing system may include an abatement controller and an effluent abatement system, wherein the abatement controller controls the effluent abatement system to reduce NOx production, while ensuring abatement of the effluent gases from the processing system. The effluent abatement system may include a combustion-type effluent abatement system and/or a plasma-type effluent abatement system. The abatement controller may select operating modes of the effluent abatement systems to reduce NOx production.
    Type: Application
    Filed: December 18, 2014
    Publication date: September 22, 2016
    Inventors: Paul E. Fisher, Monique McIntosh, Andrew Herbert, Colin John Dickinson
  • Publication number: 20160089630
    Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a foreline having a first end configured to couple to an exhaust port of a vacuum processing chamber, and an injection port is formed in the foreline. The abatement system further includes a scrubber coupled to a second end of the foreline. There is no effluent burner or plasma source interfaced with the foreline between the first end and the scrubber. Low temperature steam is injected into the foreline through the injection port to abate the PFCs flowing out of the vacuum processing chamber.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 31, 2016
    Inventors: Colin John DICKINSON, Dustin W. HO, Monique MCINTOSH
  • Publication number: 20150251133
    Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
    Type: Application
    Filed: March 4, 2015
    Publication date: September 10, 2015
    Inventors: Michael S. COX, Monique MCINTOSH, Colin John DICKINSON, Paul E. FISHER, Yutaka TANAKA, Zheng YUAN
  • Publication number: 20080014134
    Abstract: In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.
    Type: Application
    Filed: August 14, 2007
    Publication date: January 17, 2008
    Inventors: Sebastien Raoux, Kuo-Chen Lin, Robbert Vermeulen, Daniel Clark, Stephen Tsu, Mehran Moalem, Allen Fox, Monique McIntosh, Joshua Putz, Eric Rieske, Poh Lee
  • Publication number: 20080003151
    Abstract: In some aspects, an apparatus is provided for abating perfluorocarbons (PFCs) in a controlled decomposition oxidation (CDO) thermal reaction chamber. The apparatus includes (1) a cartridge insertable into the thermal reaction chamber having gas-permeable first and second ends and including a catalyst material; and (2) thermally-conductive fixtures positioned within the cartridge. Numerous other aspects are provided.
    Type: Application
    Filed: February 9, 2007
    Publication date: January 3, 2008
    Inventors: Sebastien Raoux, Kuo-Chen Lin, Robbert Vermeulen, Daniel Clark, Stephen Tsu, Mehran Moalem, Allen Fox, Monique McIntosh, Joshua Putz, Eric Rieske, Poh Lee
  • Publication number: 20080003150
    Abstract: In certain aspects, a system is provided for abating perfluorocarbons (PFCs) from a gaseous waste stream that includes (1) a wet scrubber adapted to scrub a gaseous waste stream and having an outlet adapted to discharge a scrubbed gaseous waste stream; and (2) a controlled decomposition oxidation (CDO) system. The CDO system includes a CDO thermal reaction chamber that includes (a) an inlet coupled to the outlet of the wet scrubber; (b) a catalyst bed adapted to abate PFCs within the CDO thermal reaction chamber; and (c) an outlet. Numerous other aspects are provided.
    Type: Application
    Filed: February 9, 2007
    Publication date: January 3, 2008
    Inventors: Sebastien Raoux, Kuo-Chen Lin, Robbert Vermeulen, Daniel Clark, Stephen Tsu, Mehran Moalem, Allen Fox, Monique McIntosh, Joshua Putz, Eric Rieske, Poh Lee
  • Publication number: 20080003158
    Abstract: In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.
    Type: Application
    Filed: February 9, 2007
    Publication date: January 3, 2008
    Inventors: Sebastien Raoux, Kuo-Chen Lin, Robbert Vermeulen, Daniel Clark, Stephen Tsu, Mehran Moalem, Allen Fox, Monique McIntosh, Joshua Putz, Eric Rieske, Poh Lee
  • Publication number: 20080003157
    Abstract: In at least one aspect, a controlled decomposition oxidation (CDO) system is provided for abating perfluorocarbons (PFCs) that includes (1) an upstream portion including a first conduit adapted to convey a gaseous waste stream; (2) a thermal reaction chamber having an inlet coupled to the first conduit, a catalyst bed adapted to abate PFCs, and an outlet; and (3) a downstream portion including a second conduit having a first end coupled to the outlet of the thermal reaction chamber and having a portion, downstream from the first end, positioned proximate to the first conduit. The second conduit is adapted to convey a gaseous waste stream heated within the thermal reaction chamber to enable a transfer of heat energy from the second conduit to the first conduit so as to pre-heat the gaseous waste stream in the first conduit. Numerous other aspects are provided.
    Type: Application
    Filed: February 9, 2007
    Publication date: January 3, 2008
    Inventors: Sebastien Raoux, Kuo-Chen Lin, Robbert Vermeulen, Daniel Clark, Stephen Tsu, Mehran Moalem, Allen Fox, Monique McIntosh, Joshua Putz, Eric Rieske, Poh Lee
  • Publication number: 20070086931
    Abstract: In a first aspect, a first abatement apparatus is provided. The first abatement apparatus includes (1) an oxidation unit adapted to receive an effluent stream from a semiconductor device manufacturing chamber; (2) a first water scrubber unit adapted to receive the effluent stream from the oxidation unit; and (3) a catalysis unit adapted to receive the effluent stream from the first water scrubber unit. Numerous other aspects are provided.
    Type: Application
    Filed: June 13, 2006
    Publication date: April 19, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Sebastien Raoux, Brian Kingston, Mark Curry, Daniel Clark, Robbert Vermeulen, Belynda Flippo, Mark Holst, Steve Tsu, Kevin Lin, Monique Mcintosh