Abstract: A process for developing a photolithographic pattern on the surface of an exposed workpiece in a process chamber; disposing the workpiece in a process chamber; heating the workpiece and introducing a silylating agent to the process chamber and to a face of the workpiece to be processed; generating activated species from a source of oxygen; and introducing the activated species to the face of the workpiece.

Abstract: A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl.sub.4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl.sub.4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases into the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.

Abstract: A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

Abstract: A plasma etching process employs a halogen liberating gas to selectively etch a top semiconductor layer of a bilayer with respect to a bottom semiconductor layer. A fluorine rich gas reacts with a top germanium layer for removal thereof, while forming a passivating surface layer on a bottom silicon layer to inhibit the silicon' plasma reaction therewith.

Abstract: An etchant of PSG (14) or BPSG with high selectivity to substantially undoped oxide (12) includes a fluorine-liberating compound and a fluorine-scavenging compound. The fluorine-liberating compound is preferably a perfluorinated inorganic compound, and the fluorine-scavenging compound is preferably a hydrogen-liberating compound such as hydrogen. A particularly preferred inorganic fluorine-liberating compound is nitrogen trifluoride. In an exemplary embodiment, etch rate ratios of PSG to undoped oxide as high as 11 to 1 were obtained.

Abstract: A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl.sub.4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl.sub.4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases into the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.

Abstract: A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

Abstract: A method for patterning small-geometry contacts with sloped sidewalls in integrated circuit fabrication. A multilayer resist process is used, and the spacer layer is undercut by overexposure and overdevelopment at the pattern transfer stage. This provides a cantilever etch mask structure, without the need to use any hardmask layers.

Abstract: A plasma dry etch process for etching semiconductor insulating materials, such as thermally grown or CVD deposited silicon oxide, with selectivity to silicon and refractory metals and their silicides, using a fluorinated inorganic center together with a hydrogen-liberating source under glow discharge conditions. The process does not employ saturated or unsaturated fluorocarbons as etchants, thereby eliminating the polymerization problem.

Abstract: A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO2 hard mask. The SiO2 hard mask is forward sputtered during the course of the Si etch so as to slowly deposit SiOx (x<2) on the sidewalls of the silicon trench. Since the sidewall deposit shadows etching at the bottom of the trench near the sidewall, the effect of this gradual buildup is to produce a positively sloped trench sidewall without "grooving" the bottom of the trench, and without linewidth loss. This process avoids the prior art problems of mask undercut, which generates voids during subsequent refill processing, and grooving at the bottom of the trench, which is exceedingly deleterious to thin capacitor dielectric integrity.

Abstract: A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO.sub.2 hard mask. The SiO.sub.2 hard mask is forward sputtered during the course of the Si etch so as to slowly deposit SiO.sub.x (x<2) on the sidewalls of the silicon trench. Since the sidewall deposit shadows etching at the bottom of the trench near the sidewall, the effect of this gradual buildup is to produce a positively sloped trench sidewall without "grooving" the bottom of the trench, and without linewidth loss. This process avoids the prior art problems of mask undercut, which generates voids during subsequent refill processing, and grooving at the bottom of the trench, which is exceedingly deleterious to thin capacitor dielectric integrity.

Abstract: A plasma etch process for etching titanium nitride selectively with respect to titanium silicides. A reducing electrode, a low flow rate, and a non-copious fluorine source (such as CF.sub.4) are used to achieve a fluorine-deficient plasma. Preferably the substrate temperature is allowed to rise above 50 C during etching.

Abstract: A new process for plasma etching silicon oxides in integrated circuit structures. A chemistry comprising both oxygen and nitrogen trifluoride is used, with oxygen the dominant component. This provides excellent selectivity to silicon. This etch chemistry also erodes photoresist rapidly, so that it is typically used in combination with a hard-masking process. One particular application of this invention is in a cantilever-etch-mask contact profiling process.