Abstract: A method and apparatus for growing semiconductor quality oxide thermal layers on semiconductor wafers fast enough to be economically feasible as a batch wafer process system. Process speed is insured by high pressure and high temperature. For example, if the pressure is about 10 to 25 atmospheres and at a temperature of 600.degree. C. to 1100.degree. C., approximately 90.0 minutes are required to grow a 5,000 .ANG. oxide layer on about 50 wafers in a steam environment. The system can reach these operating conditions from ambient in approximately 17 minutes and depressurization and cool down require approximately 22 minutes. The apparatus includes a processing chamber to be pressurized with an oxidant, such as high pressure steam or oxygen. The process chamber is contained in a pressure vessel adapted to be pressurized with an inert gas, such as nitrogen, to a high pressure.

Abstract: A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid water under pressure into the enclosure and for the continuous flow through of water vapor at high temperature and high pressure in the reaction chamber while maintaining the aforementioned pressure balance.

Abstract: Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.

Abstract: Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.