Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 2500 m2/g to 4000 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 2500 m2/g to 4000 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 2500 m2/g to 4000 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 1000 m2/g to 4000 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: A method of manufacturing a carbon-metal organic framework composite includes: preparing a mixed solution comprising a metal ion precursor and an organic ligand precursor; forming a Metal-Organic Framework (MOF) on a surface of a carbon support using the mixed solution; and carbonizing the MOF formed on the surface of the carbon support to form a Carbonized Metal-Organic Framework (C-MOF).

Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 1000 m2/g to 4000 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: The present invention relates to a luminous device with a heat pipe formed therein and a heat pipe lead for a luminous device. The present invention provides a luminous device including a heat pipe lead or electrode and a luminous chip mounted onto the heat pipe lead or electrode. The luminous device of the present invention further comprises a heat dissipation member, such as a heat radiating plate or thermoelectric device, installed at an end of the heat pipe lead or electrode. Therefore, through the heat pipe lead or electrode of the present invention, a higher heat dissipation effect greater can be obtained as compared with the conventional one. As a result, it is possible to reduce thermal stress on a luminous device and to prevent the occurrence of a phenomenon in which external impurities penetrate into the luminous device. In addition, the cooling efficiency and the light-emitting efficiency of a luminous chip can be maximized by further disposing a heat dissipation member outside the heat pipe.

Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.

Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.