Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Abstract: Provided is an apparatus for measuring a thermoelectric device. The apparatus includes a high temperature heater controlling a temperature of a first side of a sample, a low temperature heater controlling a temperature of a second side of the sample, a fine control heater controlling the temperature of the first side of the sample by a smaller unit than the high temperature heater, a temperature control and voltage measuring unit controlling the high temperature heater, the low temperature heater, and the fine control heater and measuring voltages of the first and second sides of the sample, and a thermal conductivity measuring unit measuring thermal conductivity of the sample by using a high temperature output voltage generated in the first side of the sample and a low temperature output voltage generated in the second side of the sample.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: The inventive concept relates to a thermal conductivity measuring device and a method of measuring the thermal conductivity. The thermal conductivity measuring device may include a first structure which is connected to one side end of a sample and receives heat from a heat source; a second structure connected to the other side end of the sample; a first stage connected to the first structure while supporting the first structure; a second stage connected to the second structure while supporting the second structure; a connection unit connected between the first stage and the second stage; and a measuring unit measuring temperatures of the first and second structures and the first and second stages. Since the thermal conductivity measuring of the inventive concept correct a temperature change of a stage due to heat transmission emitted from the stage considering a measurement environment, reliability of measurement may be improved.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: A DC-DC boost converter for a power generation element includes a power generation element configured to generate a both end voltage and a power supply current, an inductor charged by the power supply current, a first and second switch units comprising a plurality of first and second transistors, an MPPT control unit configured to detect the both end voltage and output a control signal to the first and second switch units so that an input voltage output from the power generation element is maintained as a predetermined proportion of the both end voltage, a current detection unit configured to output a signal for controlling the number of enabled first transistors and second transistors according to an intensity of the power supply current, and a switch selection unit configured to connect the first transistors and the second transistors through the signal.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The thermoelectric device includes a substrate, a first electrode having a first comb shape connected to one side of the substrate and open to the other side of the substrate, a second electrode having a second comb shape connected to the other side of the substrate and open to the one side of the substrate and inserted into the first electrode, and first and second thermoelectric medium layers disposed between the first electrode and the second electrode and alternately disposed in a direction apart from the substrate.

Abstract: Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Provided is a thermoelectric device. The thermoelectric device includes a substrate; first and second electrodes disposed at one side of the substrate, wherein the first and second electrodes are apart from each other; a common electrode formed on the other side of the substrate, wherein the common electrode is separated from the first and second electrodes; first and second legs connecting the common electrode to the first electrode, and the common electrode to the second electrode, respectively; and first and second barrier patterns covering the first and second legs and the substrate between the common electrode and the first electrode and between the common electrode and the second electrode, wherein the first and second barrier patterns prevents the short between the first and second legs and the common electrode and between the first and second legs and the first and second electrodes.

Abstract: Provided are a thermoelectric conductivity measurement instrument of a thermoelectric device and a measuring method of the same. The thermoelectric conductivity measurement instrument of the thermoelectric device includes a sample piece fixing module configured to provide an environment for measuring physical properties of the thermoelectric device as a sample piece and comprising an electrode part configured to provide contact points which are respectively in contact with both ends of the sample piece, and a measuring circuit module configured to provide a source AC voltage of a first frequency heating the sample piece to the electrode part, detect a first thermoelectric AC voltage of a second frequency greater than the first frequency and a second thermoelectric AC voltage of a third frequency greater than the second frequency, which are generated by a temperature change occurring at the contact points, and then obtain the thermoelectric conductivity.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Provided is an apparatus for measuring a thermoelectric device. The apparatus includes a high temperature heater controlling a temperature of a first side of a sample, a low temperature heater controlling a temperature of a second side of the sample, a fine control heater controlling the temperature of the first side of the sample by a smaller unit than the high temperature heater, a temperature control and voltage measuring unit controlling the high temperature heater, the low temperature heater, and the fine control heater and measuring voltages of the first and second sides of the sample, and a thermal conductivity measuring unit measuring thermal conductivity of the sample by using a high temperature output voltage generated in the first side of the sample and a low temperature output voltage generated in the second side of the sample.

Abstract: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.

Abstract: Thermoelectric devices are provided. First and second electrodes are provided on a substrate. A first leg including first semiconductor patterns and a first barrier pattern is provided on a first electrode. A second leg including second semiconductor patterns and a second barrier pattern is provided on the second electrode. A third electrode is provided on the first leg and the second leg. The first barrier pattern includes a metal-semiconductor compound including a first metal, and the second barrier pattern includes a metal-semiconductor compound including a second metal. A work function of the second metal is greater than a work function of the first metal.