Abstract: An exposure device, an exposure method and a photolithography method are provided. The exposure device includes an exposure light source and an optical-path assembly, the optical-path assembly is configured to guide light emitted by the exposure light source to an exposing position, the optical-path assembly includes a light valve array, the light emitted by the exposure light source is able to be guided to the light valve array and then guided to the exposing position after the light is transmitted or reflected by the light valve array, the light valve array includes a plurality of light valve units, and optical transmittance or reflectivity of each of the light valve units is adjustable.

Abstract: An exposure device, an exposure method and a photolithography method are provided. The exposure device includes an exposure light source and an optical-path assembly, the optical-path assembly is configured to guide light emitted by the exposure light source to an exposing position, the optical-path assembly includes a light valve array, the light emitted by the exposure light source is able to be guided to the light valve array and then guided to the exposing position after the light is transmitted or reflected by the light valve array, the light valve array includes a plurality of light valve units, and optical transmittance or reflectivity of each of the light valve units is adjustable.

Abstract: A cable having a multipurpose space area comprises pods formed at both side ends of a cable and accommodating support members; electric cable insertion portions formed at the center of the cable between the pods and accommodating electric cables; support members inserted into the pods; and multiple electric cables inserted into the electric cable insertion portions. The electric cable insertion portion is partitioned into a plurality of areas by a plurality of joining portions and fusion portions to which fusible materials fused by heat are applied are formed at inner sides of the respective areas of the electric cable insertion portion.

Abstract: Provided are a flat cable and a manufacturing method thereof, and particularly, a flat cable including: a pod including pipe type insertion portions formed to be separated from each other by a predetermined distance at both side ends thereof and a central insertion portion of which both ends are integrally connected to the both pipe type insertion portions; a pair of left and right support members inserted into the pipe insertion portions; and multiple electric cables inserted into the central insertion portion and the central insertion portion of the pod is partitioned into multiple spaces separated from each other and multiple electric cables 30 are horizontally disposed in the separated spaces in one layer to minimize mutual entangling or friction of the electric cables.

Abstract: Provided are a flat cable and a manufacturing method thereof, and particularly, a flat cable including: a pod including pipe type insertion portions formed to be separated from each other by a predetermined distance at both side ends thereof and a central insertion portion of which both ends are integrally connected to the both pipe type insertion portions; a pair of left and right support members inserted into the pipe insertion portions; and multiple electric cables inserted into the central insertion portion and the central insertion portion of the pod is partitioned into multiple spaces separated from each other and multiple electric cables 30 are horizontally disposed in the separated spaces in one layer to minimize mutual entangling or friction of the electric cables.

Abstract: A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect free photomask is produced.

Abstract: An apparatus and a method according to example embodiments is capable of patterning ink on a substrate by using dip-pen nanolithography regardless of the interaction between the ink and the substrate. The patterning apparatus may includes a heat supply control device. The heat supply control device may supply heat so as to liquefy the ink and facilitate the patterning of the ink on the substrate. The melting point of the ink may be set within the predetermined temperature controlled by the heat supply control device.

Abstract: A transparent conductive film comprised of a carbon nanotube network and indium tin oxide composite and a method for manufacturing the transparent conductive film are provided.

Abstract: A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.

Abstract: A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect tree photomask is produced.

Abstract: A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.