Abstract: A method of fabricating semiconductor device is provided. The method includes providing a substrate having a trench, plasma-ionizing a gas which comprises a deposition material precursor and a doping material precursor to respectively obtain a plasma-ionized deposition material and a plasma-ionized doping material, and depositing the plasma-ionized deposition material and the plasma-ionized doping material in the trench by applying a bias voltage to a bottom surface of the trench, wherein the bottom surface of the trench comprises a first material, and sidewalls of the trench comprise a second material different from the first material.

Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.

Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.

Abstract: A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.

Abstract: Disclosed herein are an apparatus for high-density plasma chemical vapor deposition and a method of forming an insulating layer using the same. The use of the apparatus and method enables efficient formation of the insulating layer in the gap between semiconductor devices with a high aspect ratio by dispersing a total demand amount of gas in the formation process. The high-density plasma chemical vapor deposition apparatus includes a plurality of gas suppliers to supply a gas into a chamber and to form an insulating layer between semiconductor devices, each of the gas suppliers including a gas injection valve to perform an on/off operation and a valve controller to control the on/off operation of the gas injection valve and to disperse a total demand amount of the gas.

Abstract: A semiconductor substrate processing apparatus can supply RF powers having the same frequency to upper and lower electrodes serving to generate different degrees of uniformity, and control a power ratio of the RF powers, thereby enhancing a processing uniformity of a semiconductor substrate. The apparatus includes a vacuum chamber to receive a semiconductor substrate, upper and lower electrodes disposed within the vacuum chamber, RF power suppliers to supply RF powers having the same frequency to the upper and lower electrodes, and a controller to control a power ratio of the RF powers supplied from the RF power suppliers to the upper and lower electrodes.

Abstract: A process control method managing a semiconductor device manufacturing process, including an operation of a system with a plurality of sub-modules, including diagnosing an operational state of the plurality of sub-modules prior to beginning the semiconductor device manufacturing process, checking a process condition of the system, and informing operational states of the sub-modules and the process condition of the system to a user. With this configuration, a system for making semiconductor devices and processing control thereof prevents a malfunction of the semiconductor device manufacturing system according to a diagnosis of the semiconductor device manufacturing system prior to starting a semiconductor manufacturing process, thereby increasing yield in manufacturing semiconductor devices.