Abstract: A method of growing a nitride semiconductor layer includes forming a plurality of nano-structures on a substrate, forming a first buffer layer on the substrate such that upper portions of each of the nano-structures are exposed, removing the nano-structures to form voids in the first buffer layer, and growing a nitride semiconductor layer on the first buffer layer including the voids.

Abstract: A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.

Abstract: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

Abstract: A method and apparatus for providing information, and a computer readable storage medium having recorded thereon a program for executing the method, are provided. The method includes receiving information from at least one device included in a location-based group; transmitting information of the location-based group based on the received information to an external device; receiving at least one piece of targeting information regarding the location-based group based on the information of the location-based group from the external device; and outputting the received at least one piece of targeting information.

Abstract: A method and apparatus for reproducing network content are provided. An apparatus for reproducing network content includes a first content list queue storing a content list received from content providing servers; a content list queue management module changing a content list stored in the first content list queue according to a user's command to change the content list; a second content list queue storing the content list changed by the content list queue management module; a content pre-fetch module pre-fetching at least one element of content from the content providing servers based on the second content list queue and storing the content in a local storage unit; and a content reproduction module seamlessly reproducing the at least one element of content stored in the local storage unit.

Abstract: A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.

Abstract: A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Abstract: A semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a silicon substrate; a plurality of nanorods formed on the silicon substrate; and a nitride semiconductor layer formed on the silicon substrate and the plurality of nanorods, wherein a plurality of voids are formed between the silicon substrate and the nitride semiconductor in regions between the plurality of nanorods.

Abstract: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

Abstract: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

Abstract: A system and method for connecting devices includes receiving from a first device a request to follow a second device, and setting a following relationship between the first device and the second device in response to the request.

Abstract: A method of recommending an application, which is capable of selecting and recommending an application with a high possibility of use, the method including: receiving, in a server, frequencies of use of a plurality of applications that are classified according to a time when each application is executed or a location where each application is executed; selecting an application from among the plurality of applications based on time and location information of where a mobile terminal is located and the frequency of use of the application; and transmitting application recommendation information including the selected application from the server to the mobile terminal.

Abstract: Provided are a method and an apparatus for displaying a photo on a screen having any shape. The method includes: extracting photographing information about a photo having a first shape; adjusting the photo for display with a shape optimized for a screen having a second shape, based on the extracted photographing information; and displaying the adjusted photo on the screen.

Abstract: A method and apparatus for providing information, and a computer readable storage medium having recorded thereon a program for executing the method, are provided. The method includes receiving information from at least one device included in a location-based group; transmitting information of the location-based group based on the received information to an external device; receiving at least one piece of targeting information regarding the location-based group based on the information of the location-based group from the external device; and outputting the received at least one piece of targeting information.

Abstract: A semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a silicon substrate; a plurality of nanorods formed on the silicon substrate; and a nitride semiconductor layer formed on the silicon substrate and the plurality of nanorods, wherein a plurality of voids are formed between the silicon substrate and the nitride semiconductor in regions between the plurality of nanorods.

Abstract: A method and an apparatus to set a telephony mode of a mobile terminal in which an audio call mode and a video call mode are automatically set using gyroscope characteristics and a user's behavior characteristics, the method including: detecting a direction of motion of the mobile terminal when there is an incoming call event; and setting the telephony mode to an audio call mode or a vide call mode according to the detected direction of the motion.

Abstract: A measurement system and a measurement method, which can obtain a measurement value close to a true value considering an overlay measurement error according to a higher order regression analysis model. The measurement system and the measurement method provide a technique for determining optimal positions of shots to be measured using an optimal experimental design. When the regression analysis model and the number of shots to be measured are determined in advance, a method is used for determining an optimal number of shots to be measured according to the regression analysis model and process dispersion using a confidence interval estimating method. A dynamic sampling method is used for dynamically changing the number and positions of shots to be measured according to a change in process features by combining the above two methods.

Abstract: A method of processing a reply to a received e-mail is provided. When a plurality of messages are contained in a received e-mail, the plurality of messages are divided into a plurality of groups, and the plurality of messages are output according to the groups.

Abstract: A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods.

Abstract: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.