Abstract: A magnetic recording and reproducing device using a giant magnetoresistive film for providing high detection sensitivity. In the giant magnetoresistive film comprising a conductive nonmagnetic film, first and second conductive ferromagnetic films, a magnetization fixing film for fixing a magnetization direction of the first ferromagnetic film, and a pair of electrodes for making a detection current flow, when no external magnetic field is received and no detection current flows, a magnetization direction of the second ferromagnetic film is made non-orthogonal to the magnetization direction of the first ferromagnetic film. Magnitude of the detection current is determined so that when no external magnetic field is received and detection current flows, they are orthogonal to each other upon receipt of a magnetic field due to the detection current.

Abstract: A highly corrosive-resistant metal having a high purity and a specific plane index is manufactured by ion beam deposition (IBD). A thin film having less defects and impurities is obtained. A magnetoresistant effect film for a magnetoresistant effect type magnetic head which is highly corrosion-resistant and exhibits excellent characteristics can be formed. In IBD according to the present invention, metal ions are provided with adjusted ion energy of 10 to 100 eV, and a metal having a particular mass number is selected by a mass separation electromagnet.

Abstract: A magnetoresistive head has a substrate (1) and, on the substrate, a magnetoresistive film (40) for converting a magnetic signal into an electric signal by using magnetoresistance effects and a pair of electrodes (60) for causing a signal detection current to flow through the magnetoresistive film. A pair of first domain wall suppressing layers (30) are arranged at opposite end portions of the magnetoresistive film, respectively, to apply a longitudinal magnetic bias to the magnetoresistive film. A second domain wall suppressing layer (45) is also provided for applying a longitudinal magnetic bias, which is weaker compared with the longitudinal magnetic bias applied by the first domain wall suppressing layers, to the magnetoresistive film (40).

Abstract: A method of fabricating a thin-film magnetic in which a mask pattern in etching a bottom pole is formed of first and second mask films in this order when viewed from the bottom pole, the first mask film is used for defining, by self-alignment, the length of that portion of the side edge of a top pole which is nearly perpendicular to a magnetic gap, the second mask film makes it possible to etch the bottom pole with high dimensional accuracy, a non-magnetic film is formed on the mask pattern having the bottom pole thereunder and the exposed region of a substrate, and the top pole is formed after the mask pattern has been exposed and removed.

Abstract: A thin film magnetic head comprising a substrate on which are successively formed a base layer, a lower magnetic film, a gap layer, an insulator layer, a conductor coil, an upper magnetic film, and a first mask, is manufactured by a method in which one or more of a gas which can be expressed by the general formula of CnHxFy (where n.gtoreq.1, x+y=2n+2, x>0, y>0, and x.gtoreq.y); and a gas which can be expressed by the general formula of CnHxFy (where n.gtoreq.1, x+y=2n+2, x.gtoreq.0, y.gtoreq.0, and x<y) is used. The structure of the magnetic head thus obtained is such that, at a height near the interface between the mask and the upper magnetic film provided therebelow, the angle defined by the side edge surfaces of the mask and the above-mentioned interface ranges from 75.degree. to 90.degree..

Abstract: A magnetic disc apparatus includes a magnetic disc for recording information; a thin film magnetic head including a magnetic pole structure having an upper magnetic pole tip and a lower magnetic pole tip arranged to provide a magnetic gap at respective end portions thereof for writing and reading information in and from the magnetic disc; a device for rotating the magnetic disc; and a device for positioning the thin film magnetic head; the upper and lower magnetic pole tips having different contours at the respective end portions as viewed from a side confronting the magnetic disc wherein the difference (.DELTA.CW in .mu.m) in the width, along the magnetic gap, of the upper magnetic pole tip and the width, along the magnetic gap, of the lower magnetic pole tip satisfies the relation0<.DELTA.CW.ltoreq.5000/Trfor the magnetic disc having a track density Tr of 1800 or more tracks per inch.

Abstract: A magnetic head for reading from and/or writing to a magnetic information storage medium has a substrate on which a plurality of thin films are formed in sequence. The films provide a magnetic circuit having a magnetic gap, a bottom pole piece and a top pole piece overlying said bottom pole piece. The top pole piece is formed as a tip portion adjoining the magnetic gap and a rear portion which makes magnetic contact with the tip portion. The rear portion is formed in the sequence after the tip portion. To ensure accurate thickness and width of the tip portion, a non-magnetic protective film is formed on the tip portion after the tip portion is formed and before the rear portion is formed.

Abstract: A thin film magnetic head including conductor coils, a plurality of insulating layers to interpose and insulate the conductor coils and a magnetic gap layer between upper and lower magnetic cores, in which another insulating layer is provided on a stepped region formed by end faces of the plurality of insulating layers.

Abstract: A thin film electroluminescent (EL) device includes a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.

Abstract: An optical modulation method and apparatus uses superconductive oxide material for the optical modulation element. The current, magnetic field, temperature or pressure applied to the superconductive oxide material is varied so as to induce a superconduction-normalconduction transition, and the resulting variation in optical characteristics such as the reflectivity, transmissivity or refractive index of the superconductive oxide material modulate the input light. The method and apparatus are fast in operation and simple in structure. The method and apparatus also detect the variation in the current, magnetic field, temperature or pressure as a change in the reflectivity, transmissivity or refractive index of the superconductive oxide material on the basis of a superconduction-normalconduction transition.

Abstract: A thin film electroluminescent (EL) device comprises a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.

Abstract: A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.

Abstract: In an electroluminescence element including light emitting layers emitting light by applying AC voltages thereto the light emitting layer consists of a light emitting layer emitting red light and a light emitting layer emitting bluish green light and a blue filter transmitting blue light and a green filter transmitting green light are disposed on the light emitting surface side of the bluish green light emitting layer. In this way it is possible to take out red, blue and green lights at an approximately equal brightness level and to realize full color.

Abstract: An electroluminescent device comprising an electroluminescent layer capable of emitting light under application of AC voltage, the electroluminescent layer comprising strontium sulfide as a matrix and containing at least one of halides and sulfides of cerium, europium, thulium, terbium and samarium, and having a lattice constant of not more than 6.04 .ANG. and a half-width value at the (111) face of not more than 0.21 degree has a higher brightness than an electroluminescent device having an electroluminescent layer comprising ZnS as a matrix.

Abstract: A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr.

Abstract: A thermal head which comprises an electrically insulating substrate, a glaze layer laid thereon, a heating resistor layer laid on the glaze layer, a plurality of first layer conductors laid on the heating resistor layer and provided at predetermined distances, a protective film laid on the heating resistor layer, and a plurality of second layer conductors counterposed to the first layer conductors and laid on the first layer conductors through an interlayer insulating film, where the interlayer insulating layer is in a two layer structure of an inorganic insulating material layer having a compressive stress and an organic insulating material layer, and the organic insulating material layer is positioned on the second layer conductor side. The thermal head as structured above is free from a problem of crack formation on the interlayer insulating layer, causing a short circuit and free from a problem of discontinuation of the second layer conductors.

Abstract: A display panel includes a pair of substrates arranged face to face with each other with a predetermined gap therebetween, at least a pair of electrodes each provided on a corresponding one of facing surfaces of the substrates, and a display substance provided between the electrodes. A picture element is made up of a pair of facing portions of the electrodes and a portion of the display substance situated between the facing portions. At least one of the electrodes is made up of a multiplicity of picture element electrodes formed of a transparent conductive film and juxtaposed to each other and a contact metal member for substantially making an electrical connection of a plurality of ones of the picture element electrodes. The contact metal member is made up of a first layer made of chromium or a chromium alloy and a second layer formed on the first layer and made of nickel or gold.

Abstract: A surface coated hard alloy material suitable for use as a material of cutting tools, anti-wear parts or the like in which high wear resistance, oxidation resistance and anti-weld characteristic are the essential requisites, and a method of producing the same. The material has a substrate of cemented carbide, cermet or the like material, a first coating layer of a hafnium compound and directly coating the substrate, a second coating layer of a solid solution of a hafnium compound and a titanium compound and coating the first coating layer, and a third coating layer of a titanium compound and coating the second coating layer. These coating layers are successively formed in a common reaction system, so that the adherence between the coating layers, as well as between the first coating layer and the substrate is remarkably improved.

Abstract: A surface coated hard alloy material suitable for use as a material of cutting tools, anti-wear parts or the like in which a high wear resistance, oxidation resistance and anti-weld characteristics are the essential requisites, and a method of producing the same. The material has a substrate made of a cemented carbide, cermet or the like hard material, a first coating layer of a solid solution of a hafnium compound and a titanium compound, and a second coating layer of titanium compound formed on the first coating layer. The coating layers are successively formed in a common reaction system by bringing hafnium tetraiodide and titanium tetraiodide together with a reaction gas into contact with the substrate while the latter is heated by high frequency induction heating, and then introducing only the titanium tetraiodide together with the reaction gas to the substrate, under reduced pressure and in the presence of a glow discharge.

Abstract: By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.