Patents by Inventor Moris Musa Dovek

Moris Musa Dovek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240135965
    Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with a Tunable Pole Protrusion or Tunable Pole Performance (TPP) side bridge design. A PMR write head can include a main pole including a tip portion configured to be disposed at an air-bearing surface (ABS) and configured to interact with a magnetic recording medium. The PMR write head can also include a hot seed (HS) portion and a first write shield. The PMR write head can also include a first metallic side bridge disposed between the tip portion of the main pole and the HS portion. The PMR write head can also include a bias circuit including at least a first bias electrical pad and a second electrical bias pad directing an electrical current flow along an electrical path between the tip portion of the main pole and the write shield portion via the first metallic side bridge.
    Type: Application
    Filed: October 23, 2022
    Publication date: April 25, 2024
    Inventors: Yue Liu, Moris Musa Dovek, Yan Wu
  • Patent number: 6943995
    Abstract: To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: September 13, 2005
    Assignee: Headway Technologies, Inc.
    Inventors: Tai Min, Po-Kang Wang, Moris Musa Dovek
  • Publication number: 20040105191
    Abstract: A spin valve device comprises a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a patterned underlayer that includes a magnetic material for providing trackwidth and longitudinal bias. The patterned underlayer can comprise a buffer layer, an antiferromagnetic layer and a ferromagnetic layer. Alternatively, the patterned underlayer can comprises a buffer layer, a chromium layer and a hard biasing, permanent magnetic layer which provides trackwidth and longitudinal bias. A lower conductor can be located on the underlayer.
    Type: Application
    Filed: July 10, 2003
    Publication date: June 3, 2004
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Tai Min, Po-Kang Wang, Moris Musa Dovek
  • Patent number: 6607923
    Abstract: A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.
    Type: Grant
    Filed: March 4, 1998
    Date of Patent: August 19, 2003
    Assignee: Hitachi Global Technologies
    Inventors: Jeffrey William Carr, Moris Musa Dovek, Mohamad Towfik Krounbi
  • Patent number: 6606782
    Abstract: To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: August 19, 2003
    Assignee: Headway Technologies, Inc.
    Inventors: Tai Min, Po-Kang Wang, Moris Musa Dovek
  • Patent number: 6608737
    Abstract: A giant magneto-resistive head is provided which includes a novel high data-rate stitched pole inductive magnetic write head. The write head incorporates a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. The spacer layer shortens the throat height of the write head, reduces its saturation write current, and improves its overwrite and side erasure performance.
    Type: Grant
    Filed: October 8, 2002
    Date of Patent: August 19, 2003
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Po-Kang Wang, Moris Musa Dovek, Gene Michael Sandler, Jen-Wei C. Koo
  • Publication number: 20030030943
    Abstract: A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.
    Type: Application
    Filed: October 8, 2002
    Publication date: February 13, 2003
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Po-Kang Wang, Moris Musa Dovek, Gene Michael Sandler, Jen-Wei C. Koo
  • Patent number: 6469874
    Abstract: A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.
    Type: Grant
    Filed: March 13, 2000
    Date of Patent: October 22, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Po-Kang Wang, Moris Musa Dovek, Gene Michael Sandler, Jeu-Wei C. Koo
  • Publication number: 20020126429
    Abstract: A spin valve device comprises a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a patterned underlayer that includes a magnetic material for providing trackwidth and longitudinal bias. The patterned underlayer can comprise a buffer layer, an antiferromagnetic layer and a ferromagnetic layer. Alternatively, the patterned underlayer can comprises a buffer layer, a chromium layer and a hard biasing, permanent magnetic layer which provides trackwidth and longitudinal bias. A lower conductor can be located on the underlayer.
    Type: Application
    Filed: March 22, 2002
    Publication date: September 12, 2002
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Tai Min, Po-Kang Wang, Moris Musa Dovek
  • Publication number: 20020048824
    Abstract: A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.
    Type: Application
    Filed: March 4, 1998
    Publication date: April 25, 2002
    Applicant: International Business Machines Corporation
    Inventors: JEFFREY WILLIAM CARR, MORIS MUSA DOVEK, MOHAMAD TOWFIK KROUNBI
  • Patent number: 6239955
    Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous selfaligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
    Type: Grant
    Filed: March 30, 1999
    Date of Patent: May 29, 2001
    Assignee: International Business Machines Corporation
    Inventors: Moris Musa Dovek, Robert E. Fontana, Richard Hsiao, Mohamad Towfik Krounbi, Hugo Alberto Emilio Santini, Virgil Simon Speriosu
  • Patent number: 6181532
    Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
    Type: Grant
    Filed: March 30, 1999
    Date of Patent: January 30, 2001
    Assignee: International Business Machines Corporation
    Inventors: Moris Musa Dovek, Robert E. Fontana, Richard Hsiao, Mohamad Towfik Krounbi, Hugo Alberto Emilio Santini, Virgil Simon Speriosu
  • Patent number: 5930084
    Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: July 27, 1999
    Assignee: International Business Machines Corporation
    Inventors: Moris Musa Dovek, Robert E. Fontana, Richard Hsiao, Mohamad Towfik Krounbi, Hugo Alberto Emilio Santini, Virgil Simon Speriosu
  • Patent number: 5893981
    Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
    Type: Grant
    Filed: March 19, 1998
    Date of Patent: April 13, 1999
    Assignee: International Business Machines Corporation
    Inventors: Moris Musa Dovek, Robert E. Fontana, Richard Hsiao, Mohamad Towfik Krounbi, Hugo Alberto Emilio Santini, Virgil Simon Speriosu
  • Patent number: 5867889
    Abstract: A magnetoresistive (MR) head having a double self-aligned contiguous junction includes an MR sensor structure with a biased guide joined thereto. The guide is formed using a first resist mask applied over the MR sensor structure. A guide biasing structure is formed using the first resist mask and a second resist mask applied over the first resist mask and the guide. The first resist mask is configured to form a double self-aligned contiguous junction between the MR sensor structure and the guide and guide bias structure. In this manner, the position of the guide biasing structure is carefully controlled so that it does not overlap the MR sensor structure.
    Type: Grant
    Filed: April 1, 1997
    Date of Patent: February 9, 1999
    Assignee: International Business Machines Corporation
    Inventors: Moris Musa Dovek, Robert Edward Fontana, Jr., Linda Hope Lane, Edward Hin Pong Lee
  • Patent number: 5757591
    Abstract: A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.
    Type: Grant
    Filed: November 25, 1996
    Date of Patent: May 26, 1998
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey William Carr, Moris Musa Dovek, Mohamad Towfik Krounbi
  • Patent number: 5650887
    Abstract: Sensors based on the giant magnetoresistance effect, specifically "spin valve" (SV) magnetoresistive sensors, have applications as external magnetic field sensors and as read heads in magnetic recording systems, such as rigid disk drives. These sensors have a ferromagnetic layer whose magnetization orientation is fixed or pinned by being exchange coupled to an antiferromagnetic layer. The magnetization of the pinned layer will become misaligned and the sensor will experience an abnormal response to the field being sensed, i.e., the external magnetic field or the recorded data in the magnetic media, if an adverse event elevates the antiferromagnetic layer above its blocking temperature. A pinned layer mangetization reset system is incorporated into systems that use SV sensors.
    Type: Grant
    Filed: February 26, 1996
    Date of Patent: July 22, 1997
    Assignee: International Business Machines Corporation
    Inventors: Moris Musa Dovek, Bruce Alvin Gurney, Virgil Simon Speriosu
  • Patent number: 5157251
    Abstract: A scanning force microscope having a sensor head and a base wherein a moveable sample holder is housed in the base and is positioned relative to a probe housed in the sensor head, such sample being monitored by an optical deflection detection system. The detection system is configured to provide direct visual observation of the probe with respect to the sample. The mirror of the detection system is mounted in a cut away portion of a sphere and defines the axis of rotation of a kinematic mount, such providing ease of fine adjustment of the detection system. The sensor head is in communication with the base by a stage kinematic mount, such providing ease of position adjustment of the sensor head with respect to the base.
    Type: Grant
    Filed: March 13, 1991
    Date of Patent: October 20, 1992
    Assignee: Park Scientific Instruments
    Inventors: Thomas R. Albrecht, Moris-Musa Dovek, Michael D. Kirk, Sang-IL Park
  • Patent number: RE35514
    Abstract: A scanning force microscope having a sensor head and a base wherein a moveable sample holder is housed in the base and is positioned relative to a probe housed in the sensor head, such sample being monitored by an optical deflection detection system. The detection system is configured to provide direct visual observation of the probe with respect to the sample. The mirror of the detection system is mounted in a cut away portion of a sphere and defines the axis of rotation of a kinematic mount, such providing ease of fine adjustment of the detection system. The sensor head is in communication with the base by a stage kinematic mount, such providing ease of position adjustment of the sensor head with respect to the base.
    Type: Grant
    Filed: October 19, 1994
    Date of Patent: May 20, 1997
    Assignee: Park Scientific Instruments
    Inventors: Thomas R. Albrecht, Moris-Musa Dovek, Michael D. Kirk, Sang-Il Park