Abstract: Embodiments of an abatement apparatus are disclosed herein. In some embodiments, an abatement apparatus may include a scrubber configured to receive an effluent stream from a process chamber and further configured to remove first particles from the effluent stream; a scrubber conduit coupled to the scrubber to receive the effluent stream therefrom and configured to remove second particles from the effluent stream, the scrubber conduit having one or more inlets configured to provide a fluid to sufficiently wet an interior surface of the scrubber conduit to trap the second particles thereon and to wash the second particles therealong; and a central scrubber coupled to the scrubber via the scrubber conduit. In some embodiments, the scrubber conduit is downward sloping from the scrubber to the central scrubber. In some embodiments, a plurality of scrubbers may be coupled to the central scrubber via a plurality of scrubber conduits.

Abstract: Methods and apparatus for forming gallium nitride and gallium aluminum nitride films, such as gallium nitride and gallium aluminum nitride epitaxial layers on a substrate are provided, including providing a substrate; and exposing the substrate to gallium vapor and an NH3 plasma so as to form a gallium nitride epitaxial layer on at least a portion of the substrate.

Abstract: This invention relates to copper(+1)(?-diketonate)(L) and related copper complexes such as copper (+1)(?-ketoiminate)(L) represented by the formula: wherein X represents O or NR9, R1 and R3 are each independently comprised of the group C1-8 alkyl, C1-8 fluoroalkyl, aryl, C1-8 alkoxy, and C1-8 alkyl ethers and R2 is H, C1-8 alkyl, C1-8 alkoxy, and halogen, R9 is C1-8 alkyl, C1-8 fluoroalkyl, phenyl, alkylphenyl, trialkylsilyl, and L represents a ligand having the structure: (R4)(R5)C?(R6)(R7) or R4—C?C—R7 wherein R4, is comprised of the group C1-8 alkanol, C1-8 alkoxyalkanol, C1-8 unsaturated alkoxyalkanol, trialkylsilanol, C1-8 aalkylamine, phenylamine; R5, R6, and R7 are comprised of the group H, C1-8 alkyl, triakylsilyl, alkoxy or phenyl.

Abstract: This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this invention is shown below: wherein M and M′ are each a metal such as Cu, Ag, Au and Ir; X and X′ can be N or O; Y and Y′ can be Si, C; Sn, Ge, Al, or B; and Z and Z′ can be C, N, or O. Substituents represented by R1, R2, R3, R4, R5, R6, R1′, R2′, R3′, R4′, R5′, and R6′ will vary depending on the ring atom to which they are attached. This invention is also directed to depositing metal and metal-containing films on a substrate, under ALD or CVD conditions, using the above novel compounds as precursors.

Abstract: This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals.

Abstract: This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals.