Patents by Inventor Moshe Finarov
Moshe Finarov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110037957Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.Type: ApplicationFiled: October 25, 2010Publication date: February 17, 2011Applicant: Nova Measuring Instruments Ltd.Inventors: Giora Dishon, Moshe Finarov, Zvi Nirel, Yoel Cohen
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Patent number: 7864343Abstract: A method of preparation of reference data for measuring the profile of a patterned structure for use in control of a manufacturing process, the method including: providing a model for generating profiles based on the manufacturing process; generating the profiles by simulation of the manufacturing process; and preparing diffraction signal reference data corresponding to the generated profiles.Type: GrantFiled: November 24, 2009Date of Patent: January 4, 2011Assignee: Nova Measuring Instruments Ltd.Inventors: Moshe Finarov, Boaz Brill
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Patent number: 7864344Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: GrantFiled: August 10, 2010Date of Patent: January 4, 2011Assignee: Nova Measuring Instruments Ltd.Inventors: Moshe Finarov, Boaz Brill
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Publication number: 20100324865Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: ApplicationFiled: August 10, 2010Publication date: December 23, 2010Applicant: NOVA MEASURING INSTRUMENTS LTD. of Weizmann Scientific ParkInventors: Moshe Finarov, Boaz Brill
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Publication number: 20100280808Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: ApplicationFiled: July 19, 2010Publication date: November 4, 2010Applicant: NOVA MEASURING INSTRUMENTS LTD. of Weizmann Scientific ParkInventors: Moshe Finarov, Boaz Brill
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Publication number: 20100280807Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: ApplicationFiled: July 19, 2010Publication date: November 4, 2010Applicant: NOVA MEASURING INSTRUMENTS LTD.Inventors: Moshe Finarov, Boaz Brill
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Patent number: 7821614Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.Type: GrantFiled: April 23, 2009Date of Patent: October 26, 2010Assignee: Nova Measuring Instruments Ltd.Inventors: Giora Dishon, Moshe Finarov, Zvi Nirel, Yoel Cohen
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Patent number: 7791740Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: GrantFiled: February 20, 2009Date of Patent: September 7, 2010Assignee: Nova Measuring Instruments Ltd.Inventors: Moshe Finarov, Boaz Brill
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Publication number: 20100220316Abstract: Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic or monochromatic illumination source. The source forms on the thin film an illuminated line. The light collected from discrete sampled points located on the illuminated line is transferred to a photo-sensitive sensor through an optical switch. The spectral signal of the light reflected, transmitted or scattered by the sampled points is collected by the sensor, processed and photovoltaic thin film parameters applicable to the quality control are derived e.g. thin film thickness, index of refraction, extinction coefficient, absorption coefficient, energy gap, conductivity, crystallinity, surface roughness, crystal phase, material composition and photoluminescence spectrum and intensity. Manufacturing equipment parameters influencing the material properties may be changed to provide a uniform thin film layer with pre-defined properties.Type: ApplicationFiled: May 6, 2010Publication date: September 2, 2010Inventor: Moshe Finarov
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Publication number: 20100214566Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.Type: ApplicationFiled: May 7, 2010Publication date: August 26, 2010Applicant: Nova Measuring Instruments, Ltd.Inventors: Boaz Brill, Moshe Finarov, David Scheiner
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Publication number: 20100204820Abstract: A system for substrate handling proposed, comprising an optical local tilt detector, a plurality of arms each having vertically extended movable along vertical axis fingers to contact the edge of a substrate, wherein at least one of the arms has a linear actuator moveable arm and each of the fingers provided by z-axis miniature linear actuator; and a control unit connected to said tilt detector and said z-axis linear actuators enabling measuring and correcting of local tilt.Type: ApplicationFiled: June 5, 2008Publication date: August 12, 2010Inventors: Moshe Finarov, Beniamin Schulman
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Patent number: 7760368Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: GrantFiled: October 31, 2007Date of Patent: July 20, 2010Assignee: Nova Measuring Instruments Ltd.Inventors: Moshe Finarov, Boaz Brill
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Publication number: 20100121627Abstract: A method of preparation of reference data for measuring the profile of a patterned structure for use in control of a manufacturing process, the method including: providing a model for generating profiles based on the manufacturing process; generating the profiles by simulation of the manufacturing process; and preparing diffraction signal reference data corresponding to the generated profiles.Type: ApplicationFiled: November 24, 2009Publication date: May 13, 2010Applicant: NOVA MEASURING INSTRUMENTS LTD. of Weizmann Scientific ParkInventors: Moshe Finarov, Boaz Brill
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Patent number: 7715007Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.Type: GrantFiled: November 26, 2007Date of Patent: May 11, 2010Assignee: Nova Measuring Instruments, Ltd.Inventors: Boaz Brill, Moshe Finarov, David Schiener
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Publication number: 20100048100Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.Type: ApplicationFiled: October 29, 2009Publication date: February 25, 2010Applicant: NOVA MEASURING INSTRUMENTS LTD.Inventor: Moshe Finarov
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Patent number: 7663768Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: GrantFiled: October 31, 2007Date of Patent: February 16, 2010Assignee: Nova Measuring Instruments Ltd.Inventors: Moshe Finarov, Boaz Brill
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Publication number: 20100006785Abstract: Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic illumination source. The source forms on the thin film a continuous illuminated line. Discrete sampled points located on the illuminated line are imaged onto a two dimensional optical switch. A concordance look-up-table between the coordinates of the above sampled points on the thin film and their coordinates on the two dimensional optical switch are generated. The spectral composition of the illumination reflected by the sampled points is determined and photovoltaic thin film parameters applicable to the quality control are derived from the spectral composition of reflected or transmitted by the photovoltaic thin film illumination.Type: ApplicationFiled: March 25, 2009Publication date: January 14, 2010Inventor: Moshe Finarov
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Publication number: 20100010659Abstract: A method and system are presented for use in controlling the processing of a structure. First measured data is provided being indicative of at least one of the following: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to the processing of the structure, and a surface profile of the structure prior to said processing. An optical measurement is applied to at least the selected sites of the structure after said processing and second measured data is generated being indicative of at least one of the following: a thickness of the processed structure (d?) and a surface profile of the processed structure, The second measured data is analyzed by interpreting it using the first measured data to thereby determine a thickness (d?1 or d?2) of at least one layer of the processed structure. This determined thickness is thus indicative of the quality of said processing.Type: ApplicationFiled: September 18, 2009Publication date: January 14, 2010Applicant: NOVA MEASURING INSTRUMENTS LTD.Inventors: Yoel Cohen, Moshe Finarov, Klara Vinokur
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Patent number: 7626710Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.Type: GrantFiled: October 31, 2007Date of Patent: December 1, 2009Assignee: Nova Measuring Instruments Ltd.Inventors: Moshe Finarov, Boaz Brill
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Patent number: RE41906Abstract: A two dimensional beam deflector is disclosed which deflects beams from multiple optical assemblies. The input of beams of the multiple optical assemblies follow parallel optical paths until deflection to a wafer. An ellipsometer using a two-dimensional beam deflector is also disclosed.Type: GrantFiled: March 21, 2008Date of Patent: November 2, 2010Assignee: Nova Measuring Instruments, Ltd.Inventor: Moshe Finarov