Abstract: A method for detecting current leakage of a film on a substrate. The film is repeatedly irradiated with an electron beam, thereby causing the film to emit x-rays. The emitted x-rays are detected with an x-ray detector, the detected x-rays emitted with each repeated irradiation of the film are counted to produce an x-ray count rate. The trend of the x-ray count rate is determined, and the current leakage of the film is determined from the trend of the x-ray count rate.

Abstract: In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

Abstract: In a first aspect, a sensor enables the efficient measurement of conducting film thickness by providing a capacitance probe with an eddy current coil placed co-axially within the capacitance probe. The capacitance probe senses the proximity of the sensor to the conducting film, the proximity measurement enabling an eddy current detector coupled to the eddy current coil to measure the thickness of the conducting film. More specifically, the eddy current coil is excited by a radio frequency generator and induces eddy currents in the conducting film. The resulting eddy currents are detected using the eddy current coil and the eddy current detector. The resultant eddy current sensing is indicative of sheet resistance that relates to film thickness. By providing both capacitance and eddy current sensing measurements, conducting film thickness may be quickly and accurately determined. Numerous other aspects are provided.

Abstract: Progress of a semiconductor fabrication process is monitored by detecting data output by the process, and then correlating a specific process event to fluctuations in the output data over a time period of 10 milliseconds or less. In one embodiment, endpoint of a plasma chamber cleaning process may be identified by calculating standard deviation of intensity of optical chamber emissions based upon a local time period. The time at which standard deviation of optical emissions attains a steady state indicates endpoint of the cleaning process. Another approach to characterizing fluctuation is to perform a Fast Fourier Transform (FFT) on the output emissions data, and then to plot over time the total power of the emissions over a relevant frequency range. The time at which total power attains a steady state also reveals endpoint of the process. Other techniques for characterizing fluctuation for process monitoring include calculation of the root-mean-square or entropy of an output signal.

Abstract: In a first aspect, a method of inspecting objects is provided. The method includes the steps of (1) measuring sheet resistance of a first stack of conducting films deposited on an object, said first stack having a topmost conducting film; (2) depositing a subsequent conducting film on said first stack of conducting films to form a second stack; (3) measuring sheet resistance of said second stack; and (4) calculating sheet resistance of the subsequent conducting film. A thickness of the subsequent conducting film may be determined based on the sheet resistance of the subsequent conducting film. Numerous other aspects are provided.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Abstract: A method is provided that includes (1) receiving information about a substrate processed within a low K dielectric deposition subsystem from an integrated inspection system of the low K dielectric deposition subsystem; (2) determining an etch process to perform within an etch subsystem based at least in part on the information received from the inspection system of the low K dielectric deposition subsystem; and (3) directing the etch subsystem to etch at least one low K dielectric layer on the substrate based on the etch process. Other methods, systems, apparatus, data structures and computer program products are provided.

Abstract: A method and system to monitor characteristics of films by sensing the spectral emissions of a plasma to which the films are exposed. As a result, the method includes sensing optical energy produced by the plasma. The optical energy has a plurality of spectral bands associated therewith, a subset of which is identified as including information corresponding to the film characteristics. The film characteristics are then measured as a function of this information. To increase the accuracy of the measurements, in one embodiment of the present invention a subgroup of the plurality of spectral bands is observed that has data associated that is substantially independent of the characteristics of interest. The characteristics are then measured as a function of both the information and the data.

Abstract: In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

Abstract: A method of nitriding a silicon oxide film according to the present invention includes flowing a nitrogen-containing gas into a substrate processing chamber and forming a plasma from the gas. Optical emissions from the plasma are then measured while a silicon oxide film deposited over a substrate disposed in the chamber is exposed to the plasma to obtain OES data that is used to optimize, monitor and/or stop the nitriding process.

Abstract: A sensor enables simultaneous or sequential eddy current and optical reflectance measurements of conducting film by providing an eddy current inspection coil and a first and a second optical fiber extending axially through the coil. The eddy current inspection coil is excited by a radio frequency generator and induces eddy currents in the conducting film which are sensed using a detector. The conducting film is illuminated by a first optical fiber, and light which is reflected from the conducting film is transmitted by a second optical fiber to a detector. In the case of opaque conducting films, the eddy current sensor measures sheet resistance which is determinative of film thickness. In opaque conducting films, optical reflectance measurements are indicative of characteristics such as grain size and surface oxidation. Eddy current sensing is indicative of sheet resistance which correlates to grain size and film thickness.

Abstract: A method and an apparatus system feature detecting faults in process conditions of a plasma-based semiconductor processing system by sensing the spectral emissions of the plasma. As a result, the method includes sensing optical energy produced by the plasma and identifying the fault in the process conditions as a function of one or more of the plurality of spectral bands. To that end, the apparatus includes a detector in optical communication with the processing chamber to sense optical energy generated by the plasma, and a spectrum analyzer, in electrical communication with the optical detector. The spectrum analyzer resolves the spectral bands and produces information corresponding thereto. A processor is in electrical communication with the spectrum analyzer, and a memory is in electrical communication with the processor. The memory includes a computer-readable medium having a computer-readable program embodied therein that controls the system to carry-out the method.

Abstract: A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component.

Abstract: A method and an apparatus to determine characteristics of a film on a substrate in a processing chamber. An example of a method in accordance with one embodiment of the present invention includes impinging optical radiation upon the film, sensing optical radiation reflected from the film to form spectral signals containing information concerning interference fringes, and obtaining thickness information of the film as a function of a periodicity of the interference fringes. The apparatus includes a detector in optical communication with the processing chamber to sense optical radiation generated by the plasma, and a spectrum analyzer in electrical communication with the optical detector. The spectrum analyzer resolves the spectral bands and produces information corresponding thereto. A processor is in electrical communication with the spectrum analyzer, and a memory is in electrical communication with the processor.

Abstract: A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.

Abstract: A method and system using spectral interference of light from plasma emissions collected at near grazing incidence to in-situ monitor and control the film thickness of a non-opaque film. Embodiments of this invention are particularly useful to all substrate processing chambers equipped to form an in-situ plasma within the chamber and which are used to deposit or etch non-opaque films. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to deposit a non-opaque film on a wafer substrate within the chamber. During the plasma deposition process, a plurality of wavelengths of radiation including those reflected from the top and bottom layer of the film being deposited upon a wafer surface are collected through an existing viewport, and conveyed to a spectrometer for measurements via an optical fiber attached near this viewport. These measurements are analyzed to determine the film's thickness.

Abstract: A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component.

Abstract: Embodiments of the invention provide an apparatus and method to determine the health of a substrate process such as, for example, a pre-clean process using plasma to remove copper oxide from a copper layer on a substrate, and the point at which the process has ended. In one aspect, optical characteristics and/or chamber impedance are used to determine the process end-point and/or process chamber health.

Abstract: A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored.

Abstract: A sensor enables simultaneous or sequential eddy current and optical reflectance measurements of conducting film by providing an eddy current inspection coil and a first and a second optical fiber extending axially through the coil. The eddy current inspection coil is excited by a radio frequency generator and induces eddy currents in the conducting film which are sensed using a detector. The conducting film is illuminated by a first optical fiber, and light which is reflected from the conducting film is transmitted by a second optical fiber to a detector. In the case of opaque conducting films, the eddy current sensor measures sheet resistance which is determinative of film thickness. In opaque conducting films, optical reflectance measurements are indicative of characteristics such as grain size and surface oxidation. Eddy current sensing is indicative of sheet resistance which correlates to grain size and film thickness.