Patents by Inventor Mosong Cheng

Mosong Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7229754
    Abstract: The present invention provides a method for detecting bacteria and a nano-well device having one or more input/output connections about a gap and one or more bacteriophages at or about the gap that trigger a detectable electrical field fluctuation when the one or more bacteriophages contact a cognate target within a liquid sample.
    Type: Grant
    Filed: November 23, 2005
    Date of Patent: June 12, 2007
    Inventors: Laszlo B. Kish, Maria Dobozi-King, Ryland Young, Mosong Cheng, James R. Biard, Sergey Bezrukov
  • Publication number: 20070111220
    Abstract: The present invention provides a method for detecting bacteria and a nano-well device having one or more input/output connections about a gap and one or more bacteriophages at or about the gap that trigger a detectable electrical field fluctuation when the one or more bacteriophages contact a cognate target within a liquid sample.
    Type: Application
    Filed: November 23, 2005
    Publication date: May 17, 2007
    Applicant: The Texas A&M University System
    Inventors: Laszlo Kish, Maria Dobozi-King, Ryland Young, Mosong Cheng, James Biard, Sergey Bezrukov
  • Patent number: 6686132
    Abstract: A method for enhancing resist sensitivity and resolution based on influencing the effects of photoacid drift and diffusion by an externally applied electric field that may optionally include a direct current offset bias is disclosed. An electric field applied to the resist film during post exposure bake (PEB) enhances photoacid drift in the direction of the applied electric field, reduces bake time, and results in less undesired diffusion. Electric-field enhanced PEB can reduce PEB time by about 30%, and at the same time, improve the sharpness of 2D corners and increase the verticality of resist sidewalls. Electric-field-enhanced PEB also significantly improves the tolerance of over-exposure and provides better critical dimension control. It is estimated that the lateral acid diffusion length is reduced by about 50%. An apparatus for carrying out the aforementioned method is also provided.
    Type: Grant
    Filed: April 20, 2001
    Date of Patent: February 3, 2004
    Assignee: The Regents of the University of California
    Inventors: MoSong Cheng, Andrew R. Neureuther
  • Publication number: 20030008246
    Abstract: A method for enhancing resist sensitivity and resolution based on influencing the effects of photoacid drift and diffusion by an externally applied electric field that may optionally include a direct current offset bias is disclosed. An electric field applied to the resist film during post exposure bake (PEB) enhances photoacid drift in the direction of the applied electric field, reduces bake time, and results in less undesired diffusion. Electric-field enhanced PEB can reduce PEB time by about 30%, and at the same time, improve the sharpness of 2D corners and increase the verticality of resist sidewalls. Electric-field-enhanced PEB also significantly improves the tolerance of over-exposure and provides better critical dimension control. It is estimated that the lateral acid diffusion length is reduced by about 50%. An apparatus for carrying out the aforementioned method is also provided.
    Type: Application
    Filed: April 20, 2001
    Publication date: January 9, 2003
    Inventors: MoSong Cheng, Andrew R. Neureuther