Abstract: A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (10A) to the top of the straight cylinder portion (10B), the silicon single crystal (10) is pulled under conditions that the oxygen concentration Oi from the shoulder (10A) to the top of the straight cylinder portion (10B) of the silicon single crystal (10) is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×1017 atoms/cm3.

Abstract: A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (10A) to the top of the straight cylinder portion (10B), the silicon single crystal (10) is pulled under conditions that the oxygen concentration Oi from the shoulder (10A) to the top of the straight cylinder portion (10B) of the silicon single crystal (10) is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×1017 atoms/cm3.

Abstract: Disclosed is a high-frequency amplifier circuit which comprises a first transistor with its base coupled to a high-frequency input terminal and grounded through a first diode and emitter grounded, a second transistor with its emitter coupled to the collector of the first transistor, base grounded through second and third diodes and coupled to a reference power supply terminal through a resistor, and collector directly coupled to the reference power supply terminal, and a third transistor with its base coupled to the emitter of the second transistor, emitter grounded, and collector coupled to an output terminal.