Patents by Inventor Motohia Kado

Motohia Kado has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150152569
    Abstract: An apparatus (10) for producing an SiC single crystal is used in the solution growth includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si—C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.
    Type: Application
    Filed: July 10, 2013
    Publication date: June 4, 2015
    Inventors: Nobuhiro Okada, Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Koji Moriguchi, Hironori Daikoku, Motohia Kado, Hidemitsu Sakamoto