Patents by Inventor Motohiro Hirano

Motohiro Hirano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching system and plasma etching method
    Patent number: 5593540
    Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.
    Type: Grant
    Filed: April 27, 1995
    Date of Patent: January 14, 1997
    Assignees: Hitachi, Ltd., Hitachi Tokyo Electronics Co., Ltd., Tokyo Electron Limited, Tokyo Electron Yamanashi Limited
    Inventors: Kazushi Tomita, Yoshikazu Ito, Motohiro Hirano, Akira Nozawa, Hiromitsu Matsuo, Shunichi Iimuro, Shigeki Tozawa, Yutaka Miura
  • Plasma etching system
    Patent number: 5423936
    Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.
    Type: Grant
    Filed: October 19, 1993
    Date of Patent: June 13, 1995
    Assignees: Hitachi, Ltd., Hitachi Tokyo Electronics, Co., Ltd., Tokyo Electron Limited, Tokyo Electron Yamanashi Limited
    Inventors: Kazushi Tomita, Yoshikazu Ito, Motohiro Hirano, Akira Nozawa, Hiromitsu Matsuo, Shunichi Iimuro, Shigeki Tozawa, Yutaka Miura