Patents by Inventor Motohiro Toyota
Motohiro Toyota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11063109Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.Type: GrantFiled: March 26, 2020Date of Patent: July 13, 2021Assignee: JOLED INC.Inventors: Atsuhito Murai, Yasuhiro Terai, Takashi Maruyama, Yoshihiro Oshima, Motohiro Toyota, Ryosuke Ebihara, Yasunobu Hiromasu
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Publication number: 20200227511Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.Type: ApplicationFiled: March 26, 2020Publication date: July 16, 2020Inventors: Atsuhito MURAI, Yasuhiro TERAI, Takashi MARUYAMA, Yoshihiro OSHIMA, Motohiro TOYOTA, Ryosuke EBIHARA, Yasunobu HIROMASU
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Patent number: 10644093Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.Type: GrantFiled: August 27, 2018Date of Patent: May 5, 2020Assignee: JOLED INC.Inventors: Atsuhito Murai, Yasuhiro Terai, Takashi Maruyama, Yoshihiro Oshima, Motohiro Toyota, Ryosuke Ebihara, Yasunobu Hiromasu
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Patent number: 10607834Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor film including an oxide semiconductor material, forming a gate electrode facing the semiconductor film, forming a gate insulating film between the gate electrode and the semiconductor film, the gate insulating film having a side face that is uncovered with the gate electrode; and washing the side face of the gate insulating film with use of a chemical liquid that is able to dissolve the oxide semiconductor material.Type: GrantFiled: November 13, 2018Date of Patent: March 31, 2020Assignee: JOLED INC.Inventors: Motohiro Toyota, Yoshihiro Oshima
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Patent number: 10551704Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.Type: GrantFiled: June 7, 2017Date of Patent: February 4, 2020Assignee: JOLED INC.Inventors: Eri Matsuo, Tomoatsu Kinoshita, Motohiro Toyota, Yasunobu Hiromasu
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Publication number: 20190333758Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor film including an oxide semiconductor material, forming a gate electrode facing the semiconductor film, forming a gate insulating film between the gate electrode and the semiconductor film, the gate insulating film having a side face that is uncovered with the gate electrode; and washing the side face of the gate insulating film with use of a chemical liquid that is able to dissolve the oxide semiconductor material.Type: ApplicationFiled: November 13, 2018Publication date: October 31, 2019Inventors: Motohiro TOYOTA, Yoshihiro OSHIMA
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Patent number: 10319883Abstract: A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode.Type: GrantFiled: November 10, 2017Date of Patent: June 11, 2019Assignee: JOLED INC.Inventors: Atsuhito Murai, Motohiro Toyota
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Publication number: 20190081125Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.Type: ApplicationFiled: August 27, 2018Publication date: March 14, 2019Inventors: Atsuhito MURAI, Yasuhiro TERAI, Takashi MARUYAMA, Yoshihiro OSHIMA, Motohiro TOYOTA, Ryosuke EBIHARA, Yasunobu HIROMASU
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Patent number: 10109650Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.Type: GrantFiled: March 22, 2017Date of Patent: October 23, 2018Assignee: JOLED INC.Inventors: Yasunobu Hiromasu, Motohiro Toyota, Shinichi Ushikura
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Publication number: 20180175246Abstract: A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode.Type: ApplicationFiled: November 10, 2017Publication date: June 21, 2018Inventors: Atsuhito MURAI, Motohiro TOYOTA
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Publication number: 20170363926Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.Type: ApplicationFiled: June 7, 2017Publication date: December 21, 2017Inventors: Eri MATSUO, Tomoatsu KINOSHITA, Motohiro TOYOTA, Yasunobu HIROMASU
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Publication number: 20170287946Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.Type: ApplicationFiled: March 22, 2017Publication date: October 5, 2017Inventors: Yasunobu HIROMASU, Motohiro TOYOTA, Shinichi USHIKURA
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Patent number: 9276120Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.Type: GrantFiled: November 3, 2014Date of Patent: March 1, 2016Assignee: Joled Inc.Inventors: Narihiro Morosawa, Motohiro Toyota
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Publication number: 20150048372Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.Type: ApplicationFiled: November 3, 2014Publication date: February 19, 2015Inventors: Narihiro MOROSAWA, Motohiro TOYOTA
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Patent number: 8883571Abstract: A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.Type: GrantFiled: February 19, 2013Date of Patent: November 11, 2014Assignee: Sony CorporationInventors: Narihiro Morosawa, Motohiro Toyota
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Patent number: 8460986Abstract: An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.Type: GrantFiled: August 3, 2007Date of Patent: June 11, 2013Assignee: Sony CorporationInventors: Motohiro Toyota, Toshiaki Arai
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Patent number: 7838351Abstract: A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.Type: GrantFiled: June 11, 2008Date of Patent: November 23, 2010Assignee: Sony CorporationInventors: Motohiro Toyota, Toshiaki Arai
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Patent number: 7511310Abstract: A light emitting device includes: a plurality of transistors individually corresponding to a plurality of pixels arrayed in a matrix shape, and a plurality of wiring lines connected with the transistors and disposed between the pixels. The wiring lines include signal lines connected with the transistors of the pixel columns composed of a plurality of pixels along a row direction or a column direction, and two or more common electrode lines connected with the transistors of a pixel group composed of a plurality of pixels along the row direction and the column direction. The common electrode lines are arranged on the two sides centering the signal lines.Type: GrantFiled: November 21, 2006Date of Patent: March 31, 2009Assignee: Sony CorporationInventors: Toshiaki Arai, Yasunobu Hiromasu, Motohiro Toyota
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Publication number: 20080315199Abstract: A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.Type: ApplicationFiled: June 11, 2008Publication date: December 25, 2008Applicant: SONY CORPORATIONInventors: Motohiro Toyota, Toshiaki Arai
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Publication number: 20080035926Abstract: An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.Type: ApplicationFiled: August 3, 2007Publication date: February 14, 2008Applicant: SONY CORPORATIONInventors: Motohiro Toyota, Toshiaki Arai