Abstract: In order to provide a bonded part capable of reducing deformation caused by injection pressure of bonding resin and preventing an increase in cost, the bonded part includes a first part, a second part, and a third part, wherein the first part includes a wall portion and a hollow portion surrounded by the wall portion, wherein a first shape portion formed of bonding resin is arranged at a position between the second part and the wall portion, wherein a second shape portion formed of the bonding resin is arranged at a position between the wall portion and the third part, and wherein a third shape portion formed of the bonding resin which connects the first shape portion and the second shape portion is arranged on the wall portion.

Abstract: [Problem] To produce a DLC film excellent in hardness and adhesiveness while preventing a film-forming rate from slowing even when the gas pressure in a chamber is a low pressure without requiring a large-scale facility such as a thermostatic device. [solution] There is provided a DLC film film-forming method being a film-forming method to film-form a DLC film on a substrate by a plasma CVD method, the method including: setting a voltage to be applied to a substrate using a DC pulse power supply to a bias voltage; using an acetylene gas or a methane gas as a film-forming gas to be supplied into a chamber; setting the total pressure of the gas in the chamber to not less than 0.5 Pa and not more than 3 Pa when the methane gas is used; setting the total pressure of the gas in the chamber to not less than 0.3 Pa and not more than 3 Pa when the acetylene gas is used; and setting the bias voltage to not less than 0.9 kV and not more than 2.2 kV.

Abstract: An intermediate layer forming method to form an intermediate layer formed between a base material and a DLC film using a PVD method includes: a Ti layer film-forming step of film-forming a Ti layer on a base material; and a TiC layer film-forming step of film-forming a TiC layer on the Ti layer, in which in the Ti layer film-forming step, an Ar gas is supplied into a chamber into which the base material is carried and a film-forming pressure is set to a pressure in a range of not less than 0.4 Pa and not more than 1 Pa to film-form the Ti layer, and in the TiC layer film-forming step, an Ar gas and a CH4 gas are supplied into the chamber, a film-forming pressure is set to a pressure in a range of 0.2 Pa or more to less than 0.4 Pa, and a second bias voltage higher in bias voltage than a first bias voltage applied to the base material in the Ti layer film-forming step and higher in bias voltage than ?100 V is applied to the base material to film-form the TiC layer.

Abstract: In order to provide a bonded part capable of reducing deformation caused by injection pressure of bonding resin and preventing an increase in cost, the bonded part includes a first part, a second part, and a third part, wherein the first part includes a wall portion and a hollow portion surrounded by the wall portion, wherein a first shape portion formed of bonding resin is arranged at a position between the second part and the wall portion, wherein a second shape portion formed of the bonding resin is arranged at a position between the wall portion and the third part, and wherein a third shape portion formed of the bonding resin which connects the first shape portion and the second shape portion is arranged on the wall portion.

Abstract: [Problem] To produce a DLC film excellent in hardness and adhesiveness while preventing a film-forming rate from slowing even when the gas pressure in a chamber is a low pressure without requiring a large-scale facility such as a thermostatic device. [solution] There is provided a DLC film film-forming method being a film-forming method to film-form a DLC film on a substrate by a plasma CVD method, the method including: setting a voltage to be applied to a substrate using a DC pulse power supply to a bias voltage; using an acetylene gas or a methane gas as a film-forming gas to be supplied into a chamber; setting the total pressure of the gas in the chamber to not less than 0.5 Pa and not more than 3 Pa when the methane gas is used; setting the total pressure of the gas in the chamber to not less than 0.3 Pa and not more than 3 Pa when the acetylene gas is used; and setting the bias voltage to not less than 0.9 kV and not more than 2.2 kV.

Abstract: An intermediate layer forming method to form an intermediate layer formed between a base material and a DLC film using a PVD method includes: a Ti layer film-forming step of film-forming a Ti layer on a base material; and a TiC layer film-forming step of film-forming a TiC layer on the Ti layer, in which in the Ti layer film-forming step, an Ar gas is supplied into a chamber into which the base material is carried and a film-forming pressure is set to a pressure in a range of not less than 0.4 Pa and not more than 1 Pa to film-form the Ti layer, and in the TiC layer film-forming step, an Ar gas and a CH4 gas are supplied into the chamber, a film-forming pressure is set to a pressure in a range of 0.2 Pa or more to less than 0.4 Pa, and a second bias voltage higher in bias voltage than a first bias voltage applied to the base material in the Ti layer film-forming step and higher in bias voltage than ?100 V is applied to the base material to film-form the TiC layer.

Abstract: In a case where it is determined that a vehicle is in an unparked state within a parking lot for at least a specified time, the parking lot where the vehicle is currently located is determined to be in a congested state, and information that pertains to the parking lot that is determined to be in a congested state is transmitted to a probe center as probe information. The probe center, based on the received probe information, creates parking lot guidance information to provide guidance on the parking lot that is in a congested state, then distributes the created parking lot guidance information to vehicles that are located in the vicinity of the parking lot that is determined to be in a congested state. A navigation device in a vehicle to which the parking lot guidance information is distributed provides guidance that pertains to the parking lot that is in a congested state.

Abstract: In a case where it is determined that a vehicle is in an unparked state within a parking lot for at least a specified time, the parking lot where the vehicle is currently located is determined to be in a congested state, and information that pertains to the parking lot that is determined to be in a congested state is transmitted to a probe center as probe information. The probe center, based on the received probe information, creates parking lot guidance information to provide guidance on the parking lot that is in a congested state, then distributes the created parking lot guidance information to vehicles that are located in the vicinity of the parking lot that is determined to be in a congested state. A navigation device in a vehicle to which the parking lot guidance information is distributed provides guidance that pertains to the parking lot that is in a congested state.

Abstract: To provide a sensitivity adjustable intrusion detecting system capable of detecting the presence of a person assuredly even under the environment where the object such as a person is difficult to be detected, thereby avoiding an erroneous operation, the sensitivity adjustable intrusion detecting system is so designed that since the detecting sensitivity of the main detecting unit 1 is altered in response to detection by the auxiliary detecting unit 2 and when such detecting sensitivity of the main detecting unit is so increased at the time the necessity to detect the presence or absence of the human body H entering in one of the main detection areas encompassed within the supervised sector, the detecting sensitivity of the main detecting unit is increased to allow the human body to be assuredly detected under the environment where the human body is difficult to be detected, thereby avoiding an erroneous operation.