Abstract: Provided is a liquid ejecting head including a piezoelectric element which includes a piezoelectric layer and electrodes provided on the piezoelectric layer on an upper portion of a zirconium oxide layer, in which the zirconium oxide layer is formed of granular crystal grains.

Abstract: Provided is a liquid ejecting head including a piezoelectric element which includes a piezoelectric layer and electrodes provided on the piezoelectric layer on an upper portion of a zirconium oxide layer, in which the zirconium oxide layer is formed of granular crystal grains.

Abstract: Some kinds of carboxylic acids have a stabilizing effect on metal alkoxides and, in a precursor solution, are unlikely to cause a reduced storage stability and an increased viscosity of the precursor solution even when their content is increased; they can be used in the solvent component of the precursor solution. The carboxylic acid content is preferably in a range of 20% by mass to 60% by mass, both inclusive, of the total amount of the raw materials used to prepare the precursor solution. The carboxylic acid component prevents the hydrolysis due to the moisture in the air when the carboxylic acid content is equal to or more than 20% by mass. When the carboxylic acid content is equal to or less than 60% by mass, furthermore, the resulting precursor film will have a sufficiently large thickness.

Abstract: A method for forming a piezoelectric thin film includes applying a colloid solution onto a substrate, forming a dried film by drying the colloid solution, forming an inorganic film by degreasing the dried film, and crystallizing the inorganic film. The colloid solution contains lead acetate as a material of lead oxide, an organic metal compound as a material of metal oxides other than lead oxide, a carboxylic acid, and polyethylene glycol.

Abstract: A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C.

Abstract: Disclosed is an actuator device that includes a piezoelectric element provided as being freely displaceable on a substrate. The piezoelectric element includes a lower electrode, a piezoelectric layer and an upper electrode. In the actuator device, the Young's modulus of the lower electrode is not less than 200 GPa.

Abstract: A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).

Abstract: A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a firing step of firing the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C., to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C.

Abstract: Disclosed is an actuator device which includes a vibration plate and a piezoelectric element. The vibration plate includes an elastic film which is made of silicon oxide (SiO2) and which is formed on a substrate while the piezoelectric element is formed on the vibration plate and including a lower electrode, a piezoelectric layer and an upper electrode. The vibration plate has such a stress as to give a tensile stress between 300 MPa and 500 MPa, inclusive, to the piezoelectric element that is in a state of being displaced.

Abstract: A method for manufacturing a precursor solution for forming a PZTN compound oxide with Pb, Zr, Ti and Nb as constituent elements by a sol-gel method includes: a step of dissolving at least lead carboxylate with an organic solvent having an alkoxy group, to thereby form a first solution; a step of heat treating the first solution to remove crystallization water of the lead carboxylate and to form lead alkoxide by a ligand replacement reaction between the lead carboxylate and the organic solvent having the alkoxy group, to thereby form a second solution including the lead alkoxide; a step of mixing an alkoxide of a metal selected from at least one of Zr, Ti and Nb excluding Pb with the second solution, to thereby form a third solution including metal alkoxides of Pb, Zr, Ti and Nb, respectively; and a step of adding water to the third solution to cause hydrolysis-condensation of the metal alkoxides, to thereby form a fourth solution including a precursor of PZTN compound oxide.

Abstract: A piezoelectric device including: a substrate; a lower electrode formed over the substrate; a piezoelectric layer formed over the lower electrode and including lead zirconate titanate; and an upper electrode formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.

Abstract: A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a firing step of firing the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C.

Abstract: A piezoelectric element includes: a first electrode formed above a base substrate; a piezoelectric layer formed above the first electrode; and a second electrode formed above the piezoelectric layer, wherein the piezoelectric layer has a plurality of voids.

Abstract: A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).

Abstract: A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).

Abstract: Disclosed is an actuator device that includes a piezoelectric element provided as being freely displaceable on a substrate. The piezoelectric element includes a lower electrode, a piezoelectric layer and an upper electrode. In the actuator device, the Young's modulus of the lower electrode is not less than 200 GPa.

Abstract: A piezoelectric device including: a substrate; a lower electrode formed over the substrate; a piezoelectric layer formed over the lower electrode and including lead zirconate titanate; and an upper electrode formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.

Abstract: Disclosed is an actuator device which includes a vibration plate and a piezoelectric element. The vibration plate includes an elastic film which is made of silicon oxide (SiO2) and which is formed on a substrate while the piezoelectric element is formed on the vibration plate and including a lower electrode, a piezoelectric layer and an upper electrode. The vibration plate has such a stress as to give a tensile stress between 300 MPa and 500 MPa, inclusive, to the piezoelectric element that is in a state of being displaced.

Abstract: A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0?x?1, and y is in a range of 0.05?y?0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.

Abstract: A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, a piezoelectric film formed above the buffer layer, and a barrier layer formed above the piezoelectric film, wherein the buffer layer and the barrier layer are formed of Pb((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0?x?1, and y is in a range of 0.05?y?0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.