Abstract: A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.

Abstract: An object of the present invention is to provided a wafer exhibiting excellent surface properties, in which variation in reaction, which has been concerned in surface treatment with a diffusion controlled process such as conventional wet treatment, is effectively suppressed in a method for surface treatment of a wafer involving a chemical treatment. Provided is a method for surface treatment of a wafer involving a chemical treatment, the chemical treatment including a reaction controlled process, and a diffusion controlled process following the reaction controlled process.