Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: By an object recognition device, an object recognition method, or a non-transitory computer-readable storage medium storing an object recognition program, matching between a three-dimensional dynamic map representing a state of a mapping point group obtained by mapping of a target existing in an observation space and three-dimensional observation data representing a state of an observation point group observed in the observation space is performed, a candidate point of the mobile object is searched, and the mobile object is identified.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: The present invention provides a corrugated tube and a method for manufacturing the same capable of improving workability in press-fitting work of a pipe or a quick connector. A corrugated tube includes a flexible section having a first corrugated section and a second corrugated section, and straight sections integrally formed at both ends of the flexible section respectively. A length of valley portions in an axial center direction is larger than a length of valley portions in the first corrugated section, thereby allows a pitch P2 of mountain portions in the second corrugated section provided between the straight section and the first corrugated section to be larger than a pitch P1 of mountain portions in the first corrugated section.

Abstract: The present invention provides a corrugated tube and a method for manufacturing the same capable of improving workability in press-fitting work of a pipe or a quick connector. A corrugated tube includes a flexible section having a first corrugated section and a second corrugated section, and straight sections integrally formed at both ends of the flexible section respectively. A length of valley portions in an axial center direction is larger than a length of valley portions in the first corrugated section, thereby allows a pitch P2 of mountain portions in the second corrugated section provided between the straight section and the first corrugated section to be larger than a pitch P1 of mountain portions in the first corrugated section.

Abstract: A semiconductor device having a plurality of semiconductor chips mounted on a lead frame (10) and required portions covered with seal portions in which: the plurality of semiconductor chips are divided into a first group of semiconductor chips (Dx to Dz) and a second group of semiconductor chips (Du to Dw and Thx to Thz); both groups of semiconductor chips are mounted on the lead frame (10) at a distance from each other; the seal portions are comprised of first and second resin-seal portions (41 and 42) which cover the first and second groups of semiconductor chips, respectively, along with required portions of the lead frame; both resin-seal portions are mechanically coupled with each other by coupling portions; and a group of read terminals respectively connected to circuits within the first resin-seal portion and circuits within the second resin-seal portion are led out through a gap between the first resin-seal portion (41) and the second resin-seal portion (42).

Abstract: A semiconductor device having a plurality of semiconductor chips mounted on a lead frame (10) and required portions covered with seal portions in which: the plurality of semiconductor chips are divided into a first group of semiconductor chips (Dx to Dz) and a second group of semiconductor chips (Du to Dw and Thx to Thz); both groups of semiconductor chips are mounted on the lead frame (10) at a distance from each other; the seal portions are comprised of first and second resin-seal portions (41 and 42) which cover the first and second groups of semiconductor chips, respectively, along with required portions of the lead frame; both resin-seal portions are mechanically coupled with each other by coupling portions; and a group of read terminals respectively connected to circuits within the first resin-seal portion and circuits within the second resin-seal portion are led out through a gap between the first resin-seal portion (41) and the second resin-seal portion (42).

Abstract: A vibration damper material 1 composed of a laminated sheet having a base stock layer 3, a resilient layer 4, an primer layer 5, an organic component barrier layer 6 and an adhesive layer 7 successively laminated in that order from one to the other side thereof, and a release liner 8 stuck on the adhesive layer 7. The resilient layer 4 is constituted by a resilient material containing a vehicle consisting of a member or a mixture of two or more members selected from the group of asphalt, rubber, synthetic resins and cellulose derivatives, synthetic resin powder, and an elastic material having an elongation rate of 500% or higher. The organic component barrier layer functions to block permeation therethrough of organic components such as tar and oil components which would otherwise tend to migrate into the adhesive layer from the resilient layer.