Patents by Inventor Motonari Takebayashi
Motonari Takebayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220081770Abstract: There is provided a technique that includes: a reaction container configured to accommodate a substrate; an exhaust pipe configured to exhaust an atmosphere inside the reaction container; a gas supplier configured to supply a process gas to the substrate; a gas supply system including at least one gas supply pipe kept in fluid communication with the gas supplier and configured to supply the process gas, a plurality of valves provided on the at least one gas supply pipe, and a plurality of pressure detectors provided between the plurality of valves; and a controller configured to be capable of determining a blockage level of the at least one gas supply pipe based on at least one pressure among measurement results of the plurality of pressure detectors.Type: ApplicationFiled: September 15, 2021Publication date: March 17, 2022Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Motonari TAKEBAYASHI, Hiroshi NAKAJO
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Patent number: 10604839Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: GrantFiled: August 14, 2015Date of Patent: March 31, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Tetsuaki Inada, Yuichi Wada, Mitsunori Ishisaka, Mitsuhiro Hirano, Sadayoshi Horii, Hideharu Itatani, Satoshi Takano, Motonari Takebayashi
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Patent number: 9373499Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: April 20, 2015Date of Patent: June 21, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Publication number: 20160053373Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: ApplicationFiled: August 14, 2015Publication date: February 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tetsuaki INADA, Yuichi WADA, Mitsunori ISHISAKA, Mitsuhiro HIRANO, Sadayoshi HORII, Hideharu ITATANI, Satoshi TAKANO, Motonari TAKEBAYASHI
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Publication number: 20150252474Abstract: A substrate processing apparatus includes: a process chamber including a source gas supply and a reactive gas supply to process a plurality of substrates in the source gas supply and the reactive gas supply; a substrate placement unit rotating in the process chamber, wherein the plurality of substrates are placed on the substrate placement unit along a rotational direction thereof; a plasma generator to generate plasma in plasma generation chamber installed an upper portion of the reactive gas supply; a coil wound along an outer circumference of the plasma generation chamber, a portion of which adjacent to a sidewall of the plasma generation chamber has a constant curvature; a reactive gas supply system to supply a reactive gas to the reactive gas supply via the plasma generation chamber through a ceiling of the plasma generation chamber; and a source gas supply system to supply a source gas.Type: ApplicationFiled: March 6, 2015Publication date: September 10, 2015Applicant: Hitachi Kokusai Electric Inc.Inventors: Hideharu ITATANI, Tetsuaki INADA, Motonari TAKEBAYASHI, Kazuyuki TOYODA
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Publication number: 20150228476Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: April 20, 2015Publication date: August 13, 2015Applicant: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 9039912Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: November 12, 2012Date of Patent: May 26, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 8544411Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: February 20, 2009Date of Patent: October 1, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 8518182Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: GrantFiled: May 6, 2011Date of Patent: August 27, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 8444363Abstract: Provided is a substrate processing apparatus configured to attain conflicting purposes of high throughput and footprint reduction. The substrate processing apparatus comprises a carrying chamber, and a loadlock chamber and at least two process chambers that are arranged around the carrying chamber. The carrying chamber comprises a substrate carrying unit configured to carry a substrate between the loadlock chamber and the process chambers. The substrate carrying unit comprises a first arm provided with a first finger and a second finger, and leading ends of the first and second fingers extend horizontally in the same direction. Each of the process chambers comprises a first process unit and a second process unit, and the second process unit is disposed at a side of the process chamber distant from the carrying chamber with the first process unit being disposed therebetween.Type: GrantFiled: November 16, 2009Date of Patent: May 21, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Masakazu Sakata, Akira Takahashi, Hidehiro Yanai, Motonari Takebayashi, Shinya Tanaka
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Patent number: 8028652Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: March 20, 2007Date of Patent: October 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 8020514Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: January 21, 2009Date of Patent: September 20, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Publication number: 20110209664Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 7958842Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: GrantFiled: February 16, 2005Date of Patent: June 14, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 7861668Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: October 31, 2007Date of Patent: January 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Publication number: 20100323507Abstract: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.Type: ApplicationFiled: June 22, 2010Publication date: December 23, 2010Inventors: Kazuyuki TOYODA, Nobuhito Shima, Nobuo Ishimaru, Yoshikazu Konno, Motonari Takebayashi, Takaaki Noda, Norikazu Mizuno
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Publication number: 20100258530Abstract: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Kazuyuki TOYODA, Nobuhito Shima, Nobuo Ishimaru, Yoshikazu Konno, Motonari Takebayashi, Takaaki Noda, Norikazu Mizuno
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Publication number: 20100150687Abstract: Provided is a substrate processing apparatus configured to attain conflicting purposes of high throughput and footprint reduction. The substrate processing apparatus comprises a carrying chamber, and a loadlock chamber and at least two process chambers that are arranged around the carrying chamber. The carrying chamber comprises a substrate carrying unit configured to carry a substrate between the loadlock chamber and the process chambers. The substrate carrying unit comprises a first arm provided with a first finger and a second finger, and leading ends of the first and second fingers extend horizontally in the same direction. Each of the process chambers comprises a first process unit and a second process unit, and the second process unit is disposed at a side of the process chamber distant from the carrying chamber with the first process unit being disposed therebetween.Type: ApplicationFiled: November 16, 2009Publication date: June 17, 2010Applicant: HITACHI-KOKUSAI ELECTRIC, INC.Inventors: Masakazu SAKATA, Akira TAKAHASHI, Hidehiro YANAI, Motonari TAKEBAYASHI, Shinya TANAKA
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Publication number: 20090159440Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied.; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: February 20, 2009Publication date: June 25, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
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Publication number: 20090133630Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: January 21, 2009Publication date: May 28, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU