Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The present disclosure can be applied to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: An imaging device having first and second pixels is described. The first pixel comprises a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The first transfer transistor has a first terminal coupled to a reference signal generation circuit. The first reset transistor has a first terminal coupled to the reference signal generation circuit. The first amplifier transistor has a gate coupled to a second terminal of the first reset transistor and a second terminal of the first transfer transistor. The first select transistor is coupled to the first amplifier transistor. The second pixel comprises a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor. The second transfer transistor is coupled to the first photoelectric conversion element. The second reset transistor is configured to receive a first predetermined voltage.

Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. By placing the charge storage unit (capacitance element) formed in the substrate in the foregoing manner between PDs which are first photoelectric conversion units, it is possible to allow the capacitance element to function as a shield pair against crosstalk between the PDs in a unit pixel.

Abstract: A first pixel comprises a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The first transfer transistor has a first terminal coupled to a reference signal generation circuit. The first reset transistor has a first terminal coupled to the reference signal generation circuit. The first amplifier transistor has a gate coupled to a second terminal of the first reset transistor and a second terminal of the first transfer transistor. The first select transistor is coupled to the first amplifier transistor. A second pixel comprises a first photoelectric conversion element, a second transfer transistor coupled to the first photoelectric conversion element, a second reset transistor configured to receive a first predetermined voltage, a second amplifier transistor coupled to the second transfer transistor and the second reset transistor, and a second select transistor coupled to the second amplifier transistor.

Abstract: Provided are a solid-state imaging device and an electronic apparatus that include a charge storage unit. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to the hole.

Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.

Abstract: A first pixel comprises a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The first transfer transistor has a first terminal coupled to a reference signal generation circuit. The first reset transistor has a first terminal coupled to the reference signal generation circuit. The first amplifier transistor has a gate coupled to a second terminal of the first reset transistor and a second terminal of the first transfer transistor. The first select transistor is coupled to the first amplifier transistor. A second pixel comprises a first photoelectric conversion element, a second transfer transistor coupled to the first photoelectric conversion element, a second reset transistor configured to receive a first predetermined voltage, a second amplifier transistor coupled to the second transfer transistor and the second reset transistor, and a second select transistor coupled to the second amplifier transistor.

Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of B of FIG. 5, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of C of FIG. 5, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. By placing the charge storage unit (capacitance element) formed in the substrate in the foregoing manner between PDs which are first photoelectric conversion units, it is possible to allow the capacitance element to function as a shield pair against crosstalk between the PDs in a unit pixel.

Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.

Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.

Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.

Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.