Patents by Inventor Motoyoshi Iwata
Motoyoshi Iwata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210329749Abstract: A microwave heating device includes the following components: a heating chamber for accommodating a heating target object, a microwave generator that generates a microwave, and a coaxial connector. The coaxial connector includes a center conductor, an insulator, and an external conductor. The center conductor is connected to the output terminal of the microwave generator. The coaxial connector includes an air gap between the center conductor and the insulator. This aspect can reduce the occurrence of cracking of the soldered joint between the microwave generator and the coaxial connector.Type: ApplicationFiled: September 11, 2019Publication date: October 21, 2021Inventors: MIKIO FUKUI, TAKASHI UNO, FUMITAKA OGASAWARA, MOTOYOSHI IWATA, SHINJI TAKANO, DAISUKE HOSOKAWA, MASAYOSHI HIRAMOTO
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Publication number: 20210274609Abstract: An RF energy radiation device includes a cavity in which a heating target object is to be placed, an RF signal generation unit, an RF amplifier, a radiation element, a temperature sensor, and a controller. The RF signal generation unit oscillates an RF signal. The RF amplifier amplifies the RF signal and provides RF energy. The radiation element radiates the RF energy into the cavity. The temperature sensor is disposed in the vicinity of the RF amplifier. The controller controls the RF amplifier so that the RF amplifier adjusts the RF energy output in accordance with the temperature detected by the temperature sensor and a plurality of threshold levels. This aspect can improve the reliability of the device.Type: ApplicationFiled: September 5, 2019Publication date: September 2, 2021Inventors: SHINJI TAKANO, MASAYOSHI HIRAMOTO, FUMITAKA OGASAWARA, MOTOYOSHI IWATA, TAKASHI UNO, MIKIO FUKUI, DAISUKE HOSOKAWA
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Publication number: 20210267027Abstract: A high-frequency heating apparatus includes: a heating chamber for accommodating a load; a microwave source; at least one radiator; a temperature detector; and a controller. The microwave source generates a microwave and adjusts the frequency and output of the microwave. The at least one radiator radiates a microwave into the heating chamber. The temperature detector detects the temperature in the heating chamber. The controller causes the microwave source to adjust the output of the microwave based on the temperature profile that defines the temperature change in the load, and the temperature in the heating chamber. According to this aspect, food can be heated in accordance with the temperature profile appropriate for the cooking recipe, thereby ensuring the quality of cooked food.Type: ApplicationFiled: July 25, 2019Publication date: August 26, 2021Inventors: TAKASHI UNO, FUMITAKA OGASAWARA, MOTOYOSHI IWATA, SHINJI TAKANO, MIKIO FUKUI, DAISUKE HOSOKAWA, MASAYOSHI HIRAMOTO
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Patent number: 9203358Abstract: A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.Type: GrantFiled: March 15, 2013Date of Patent: December 1, 2015Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Tomohide Kamiyama, Hiroshi Naitou, Takashi Uno, Motoyoshi Iwata, Kazuhiro Yahata, Hikaru Ikeda
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Patent number: 8947166Abstract: A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.Type: GrantFiled: May 22, 2012Date of Patent: February 3, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Takashi Uno, Hikaru Ikeda, Kazuhiro Yahata, Motoyoshi Iwata, Hiroshi Naitou, Tomohide Kamiyama
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Patent number: 8937374Abstract: A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.Type: GrantFiled: October 24, 2012Date of Patent: January 20, 2015Assignee: Panasonic CorporationInventors: Takashi Uno, Hikaru Ikeda, Kazuhiro Yahata, Motoyoshi Iwata, Hiroshi Naitou, Tomohide Kamiyama
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Publication number: 20140231418Abstract: An aspect of the present invention provides a microwave heating device for an object having a plurality of parts, the microwave heating device including: a plurality of antennas which emits microwaves to a heating chamber inside; a sensor which detects information from a block model assigned the information indicating a characteristic of each of the parts; a display and input operation unit configured to receive an input of heating conditions for the object; an electromagnetic field analysis unit configured to derive a heating profile by electromagnetic field analysis based on the information detected by the sensor and the heating conditions inputted to the display and input operation unit, the heating profile including microwave emitting conditions for the object; and a control unit configured to control performance of the microwaves emitted from the antennas based on the derived heating profile.Type: ApplicationFiled: February 15, 2013Publication date: August 21, 2014Applicant: PANASONIC CORPORATIONInventors: Hikaru Ikeda, Motoyoshi Iwata, Tomohide Kamiyama
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Publication number: 20140191809Abstract: A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.Type: ApplicationFiled: March 15, 2013Publication date: July 10, 2014Inventors: Tomohide Kamiyama, Hiroshi Naitou, Takashi Uno, Motoyoshi Iwata, Kazuhiro Yahata, Hikaru Ikeda
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Patent number: 8698564Abstract: A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.Type: GrantFiled: April 25, 2012Date of Patent: April 15, 2014Assignee: Panasonic CorporationInventors: Tomohide Kamiyama, Hiroshi Naitou, Takashi Uno, Motoyoshi Iwata, Kazuhiro Yahata, Hikaru Ikeda
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Publication number: 20140077345Abstract: A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.Type: ApplicationFiled: October 24, 2012Publication date: March 20, 2014Applicant: Panasonic CorporationInventors: Takashi Uno, Hikaru Ikeda, Kazuhiro Yahata, Motoyoshi Iwata, Hiroshi Naitou, Tomohide Kamiyama
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Publication number: 20130176079Abstract: A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.Type: ApplicationFiled: May 22, 2012Publication date: July 11, 2013Applicant: Panasonic CorporationInventors: Takashi Uno, Hikaru IKeda, Kazuhiro Yahata, Motoyoshi Iwata, Hiroshi Naitou, Tomohide Kamiyama
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Publication number: 20130106519Abstract: A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.Type: ApplicationFiled: April 25, 2012Publication date: May 2, 2013Inventors: Tomohide Kamiyama, Hiroshi Naitou, Takashi Uno, Motoyoshi Iwata, Kazuhiro Yahata, Hikaru Ikeda
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Patent number: 8013673Abstract: An RF power amplifier according to an implementation of the present invention includes: a first power amplifier which linearly amplifies a first RF signal of a first frequency band; a second power amplifier which linearly amplifies a second RF signal of a second frequency band lower than the first frequency band; a third power amplifier which nonlinearly amplifies a third RF signal of the first frequency band; a fourth power amplifier which nonlinearly amplifies a fourth RF signal of the second frequency band, and input lines of the respective power amplifiers do not cross each other on semiconductor substrates, and the output lines of the respective power amplifiers do not cross each other on the semiconductor substrates.Type: GrantFiled: August 20, 2010Date of Patent: September 6, 2011Assignee: Panasonic CorporationInventors: Satoshi Makioka, Masahiko Inamori, Motoyoshi Iwata
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Publication number: 20110050348Abstract: An RF power amplifier according to an implementation of the present invention includes: a first power amplifier which linearly amplifies a first RF signal of a first frequency band; a second power amplifier which linearly amplifies a second RF signal of a second frequency band lower than the first frequency band; a third power amplifier which nonlinearly amplifies a third RF signal of the first frequency band; a fourth power amplifier which nonlinearly amplifies a fourth RF signal of the second frequency band, and input lines of the respective power amplifiers do not cross each other on semiconductor substrates, and the output lines of the respective power amplifiers do not cross each other on the semiconductor substrates.Type: ApplicationFiled: August 20, 2010Publication date: March 3, 2011Applicant: PANASONIC CORPORATIONInventors: Satoshi MAKIOKA, Masahiko INAMORI, Motoyoshi IWATA
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Patent number: 7872532Abstract: It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.Type: GrantFiled: April 9, 2009Date of Patent: January 18, 2011Assignee: Panasonic CorporationInventors: Shinichiro Ishihara, Motoyoshi Iwata, Shingo Enomoto
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Publication number: 20100273535Abstract: A radio-frequency power amplifier device includes an input terminal for which a first radio-frequency signal for a CDMA mode within a first frequency band and a third radio-frequency signal for a TDMA mode within the first frequency band are selectively provided, a second input terminal for which a second radio-frequency signal for a CDMA mode within a second frequency band and a fourth radio-frequency signal for a TDMA mode within the second frequency band are selectively provided, a first power amplifier unit which to amplifies the provided first radio-frequency signal, a second power amplifier unit which amplifies the provided second radio-frequency signal, a third power amplifier unit which amplifies the provided third radio-frequency signal, and a fourth power amplifier unit which amplifies the provided fourth radio-frequency signal. These power amplifier units are arranged in order of the first power amplifier unit to the fourth power amplifier unit.Type: ApplicationFiled: April 13, 2010Publication date: October 28, 2010Applicant: PANASONIC CORPORATIONInventors: Masahiko INAMORI, Motoyoshi IWATA, Kaname MOTOYOSHI, Masahiro MAEDA, Yorito OTA
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Publication number: 20090256637Abstract: It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.Type: ApplicationFiled: April 9, 2009Publication date: October 15, 2009Applicant: Panasonic CorporationInventors: Shinichiro ISHIHARA, Motoyoshi IWATA, Shingo ENOMOTO
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Patent number: 7504887Abstract: To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.Type: GrantFiled: April 10, 2007Date of Patent: March 17, 2009Assignee: Panasonic CorporationInventors: Takuya Masuda, Motoyoshi Iwata, Shinichiro Ishihara
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Patent number: 7439809Abstract: There are provided an RF power amplifier transistor (2), a bias supply circuit (51) which supplies a bias current to the base of the RF power amplifier transistor and a bias control circuit (52) connected between the base of the RF power amplifier transistor and bias supply circuit, and the bias control circuit is connected to the power supply (32) of the RF power amplifier transistor, thus realizing high efficiency of the RF power amplifier when the power level is low and improving the temperature characteristic of the power amplifier when the power level is low.Type: GrantFiled: April 17, 2006Date of Patent: October 21, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Motoyoshi Iwata, Hiroyasu Takehara, Hiroyuki Yamauchi
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Publication number: 20070236293Abstract: To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.Type: ApplicationFiled: April 10, 2007Publication date: October 11, 2007Inventors: Takuya Masuda, Motoyoshi Iwata, Shinichiro Ishihara